Datasheet > T660N22TOFHOSA1

T660N22TOFHOSA1

更新时间： 2024-11-16 10:56:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	275K
描述
Silicon Controlled Rectifier, 1520A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element,

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T660N22TOFHOSA1 数据手册

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T660N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

2200 V

2400 V

2600 V

2200 V

2400 V

2600 V

T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

^Pere^ion^din^scd^ha^et^Ve^on^{rwärts- und Rückwärts-Spitzensperrspannung}

repetitive peak forward off-state and reverse voltages

Elektrische Eigenschaften

Vorwärts-Stossspitzensperrspannung

non-repetitive peak forward off-state voltage

T_vj= -40°C... T_{vj max}

V_DSM

2300 V

2500 V

2700 V

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

T_vj= +25°C... T_{vj max}

V_RSM

1500 A

660 A

970 A

1520 A

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

I_TRMSM

I_TAVM

T_C= 85 °C

T_C= 55 °C, θ = 180°sin, t_P= 10 ms I_TAVM

I_TRMS

13000 A

11500 A

T_vj= 25 °C °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

Stossstrom-Grenzwert

surge current

I_TSM

845 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

660 10³ A²s

150 A/µs

DIN IEC 60747-6

Kritische Stromsteilheit

critical rate of rise of on-state current

(di_T/dt)_cr

(dv_D/dt)_cr

f = 50 Hz, i_GM= 1 A, di_G/dt = 1 A/µs

1000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter F

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

max.

2,53 V

1,32 V

T_vj= T_{vj max}, i_T= 2850 A

T_vj= T_{vj max}, i_T= 650 A

v_T

1,00 V

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlasskennlinie

on-state characteristic

T_vj= T_{vj max}

V_(TO)

r_T

0,500 mΩ

200 A ≤ i_T≤ 3300 A

1,245E+00

3,716E-04

-1,040E-01

1,970E-02

v_T= A + B i_T+ C ln(i_T+ 1) + D

i_T

Zündstrom

T_vj= 25 °C, v_D= 12V

I_GT

max.

250 mA

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

V_GT

I_GD

max.

2,2 V

T_vj= T_{vj max}, v_D= 12V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

10 mA

5 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

T_vj= T_{vj max}, v_D= 0,5 V_DRM

V_GD

I_H

max.

0,25 V

T_vj= 25°C, v_D= 12V

max.

300 mA

Einraststrom

latching current

T_vj= 25°C, v_D= 12V, R_GK≥ 10 Ω

i_GM= 1 A, di_G/dt = 1 A/µs, t_g= 20 µs

I_L

max. 1500 mA

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

i_D, i_R

t_gd

max.

100 mA

4 µs

v_D= V_DRM, v_R= V_RRM

Zündverzug

gate controlled delay time

DIN IEC 60747-6

T_vj= 25 °C, i_GM= 1 A, di_G/dt = 1 A/µs

H.Sandmann

date of publication: 2009-03-04

prepared by:

revision:

1.0

approved by: M.Leifeld

IFBIP D AEC / 2009-03-04, H.Sandmann

A 04/09

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与T660N22TOFHOSA1相关器件

型号	品牌	获取价格	描述	数据表
T660N22TOFXPSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 1520A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element,
T660N24TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 1520A I(T)RMS, 660000mA I(T), 2400V V(DRM), 2400V V(RRM), 1
T660N26TOF	INFINEON	获取价格	Silicon Controlled Rectifier, 1520A I(T)RMS, 660000mA I(T), 2600V V(DRM), 2600V V(RRM), 1
T660N26TOFHOSA1	INFINEON	获取价格	Silicon Controlled Rectifier, 1520A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
T6613	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs
T6613-5K	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs
T6613-5KC	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs
T6613-5KF	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs
T6613-C	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs
T6613-F	AMPHENOL	获取价格	An affordable gas sensing solution for OEMs

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