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T620W_04

更新时间: 2024-11-09 03:29:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 三端双向交流开关
页数 文件大小 规格书
5页 64K
描述
6A SNUBBERLESTM TRIAC

T620W_04 数据手册

 浏览型号T620W_04的Datasheet PDF文件第2页浏览型号T620W_04的Datasheet PDF文件第3页浏览型号T620W_04的Datasheet PDF文件第4页浏览型号T620W_04的Datasheet PDF文件第5页 
T620W  
T630W  
®
6A SNUBBERLESS™ TRIAC  
A2  
MAIN FEATURES  
Symbol  
Value  
6
Unit  
A
IT(RMS)  
G
VDRM/VRRM  
IGT  
600 and 800  
20 to 30  
V
A1  
mA  
DESCRIPTION  
G
A2  
A1  
Based on ST’ Snubberless technology providing high  
commutation performances, the T620-600W/800W &  
T630-600W/800W are specially recommended for  
use on inductive loads, thanks to their high commuta-  
tion performances, such as rice cookers. They comply  
with UL standards (ref. E81734).  
ISOWATT220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
IT(RMS)  
ITSM  
Parameter  
Value  
6
Unit  
A
RMS on-state current (Full sine wave)  
Tc= 105°C  
t = 20ms  
Non repetitive surge peak on-state  
current (Full cycle, Tj initial = 25°C )  
F = 50Hz  
F = 60Hz  
80  
A
t = 16.7ms  
84  
I2t  
I2t Value for fusing  
tp = 10 ms  
36  
A2s  
dI/dt  
Critical rate of rise of on-state current  
F = 120 Hz  
tp = 10ms  
tp = 20µs  
Tj = 125°C  
50  
A/µs  
IG = 2 x IGT, tr 100ns  
V
DSM/VRSM Non repetitive surge peak off-state  
voltage  
Tj = 25°C  
VDRM/VRRM  
+ 100  
V
IGM  
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150 °C  
- 40 to + 125  
March 2004 - Ed: 2  
1/5  

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