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T485B_VCO PDF预览

T485B_VCO

更新时间: 2024-11-09 20:39:11
品牌 Logo 应用领域
英飞凌 - INFINEON 射频微波
页数 文件大小 规格书
4页 220K
描述
Wide Band Low Power Amplifier, 34000MHz Min, 42000MHz Max,

T485B_VCO 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84构造:COMPONENT
最大工作频率:42000 MHz最小工作频率:34000 MHz
射频/微波设备类型:WIDE BAND LOW POWERBase Number Matches:1

T485B_VCO 数据手册

 浏览型号T485B_VCO的Datasheet PDF文件第2页浏览型号T485B_VCO的Datasheet PDF文件第3页浏览型号T485B_VCO的Datasheet PDF文件第4页 
T485B_VCO  
GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier  
Monolithic Microwave Integrated Circuit (MMIC)  
Voltage Controlled Oscillator with Buffer Amplifier  
InGaAs/AlGaAs/GaAs Pseudomorphic HEMT  
Technology  
Frequency range: 34 GHz to 42 GHz  
Pout > 8 dBm  
chip size: 2.3 mm x 0.6 mm  
ESD: Electrical discharge sensitive device, observe handling precautions!  
Description:  
This voltage controlled oscillator with integrated two-stage buffer amplifier is intended for use  
in radio link applications. It provides an output power of 8 dBm and can be tuned from 34  
GHz to 42 GHz by changing the length of an airbridge. Finetuning can be accomplished  
electrically. The device is fabricated with a 0.18 micron Pseudomorphic  
InGaAs/AlGaAs/GaAs High Electron Mobility Transistor processing technology.  
7\SH  
2UGHULQJꢀ&RGH  
3DFNDJH  
T485A_VCO  
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Chip  
Electrical Specifications:  
Parameter  
Min  
Typ  
Max  
Unit  
GHz  
GHz  
dBm  
Frequency Range  
Fmod  
34  
42  
2
8
Pout  
Phase Noise @ 39,3 GHz  
1 MHz carrier offset  
100 kHz carrier offset  
-90  
-60  
dBc/Hz  
dBc/Hz  
Infineon Technologies AG i. Gr.  
pg. 1/4  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  

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