Datasheet > T2550H

T2550H

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
8页	109K
描述
Snubberless high temperature 25 A Triacs

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T2550H 数据手册

T2550H

Characteristics

Figure 1.

Maximum power dissipation versus Figure 2.

RMS on-state current (full cycle)

RMS on-state current versus case

temperature (full cycle)

P(W)

I (A)

T(RMS)

(A)

T(RMS)

T (°C)

0.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0

100

125

150

Figure 3.

Relative variation of thermal

impedance versus pulse duration

Figure 4.

On-state characteristics (maximum

values)

(A)

K=[Z /R

]

th th

300

100

1.00

0.10

0.01

T_jmax.

V_t0= 0.80V

R_d= 19 mΩ

th(j-c)

T_j= T_jmax.

th(j-a)

T_j= 25°C.

t (s)

V (V)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Figure 5.

Surge peak on-state current versus Figure 6.

number of cycles

Non-repetitive surge peak on-state

current for a sinusoidal pulse with

width t_p< 10 ms and corresponding

value of I²t

(A), I²t (A²s)

TSM

(A)

TSM

10000

1000

100

300

250

200

150

100

Tj initial=25 °C

dI/dt limitation: 50 A/µs

t=20ms

One cycle

Non repetitive

T_jinitial=25°C

I_TSM

Repetitive

T_C=125°C

I²t

Number of cycles

t (ms)

100

1000

0.01

0.10

1.00

10.00

3/8

1 234 5 6 7 8

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