T1P3005028-SP
50 W, 28V, 500 MHz—2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor
— Narrow Band up to 2GHz
Introducꢀon
— 12dB gain
The T1P3005028-SP is a POWERBANDTM discrete pHEMT,
depleꢀon mode, RF Power transistor designed to operate from
500MHz to 2GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 50waꢁs across
the enꢀre band when operated in the TriQuint wide-band test
fixture. The T1P3005028-SP can also be used in narrow band ap-
plicaꢀons and is rated at 65Waꢁs P1dB at 2GHz.
— 54% efficiency
— 65Waꢁ P1dB
Table 1. Maximum Raꢀngs
Sym
Parameter
Value
28 V
Notes
+
V
Posiꢀve Supply Voltage
Negaꢀve Supply Voltage Range
Posiꢀve Supply Current
Gate Supply Current
2/
-
V
–5V to 0V
5.6A
+
l
2/
Figure 1. Available Packages
| l
T
|
70 mA
G
P
Power Dissipaꢀon
See note 3 2/ 3/
150o C
4/
D
Operaꢀng Channel Temperature
CH
1/ These raꢀngs represent the maximum operable values for this
device.
2/ Combinaꢀons of supply voltage, supply current, input power,
and output power shall not exceed P .
D
3/ For a median life ꢀme of 1E+6 hrs, Power dissipaꢀon is limited
to: P (max) = (150 °C – TBASE °C) / 3.5 (°C/W)
D
4/ Juncꢀon operaꢀng temperature will directly affect the device
median ꢀme to failure(T ). For maximum life, it is recom-
M
mended that juncꢀon temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Informaꢀon
Parameter
Test Condiꢀons TCH
(°C) (°C/W) (HRS)
145 3.5 1.6E+6
θJC
T
M
θ
Thermal Resis- Vd = 10 V
Features
JC
tance (channel to
Idq = 900 mA
backside of carrier) Pdiss = 9 W
— Pulse Characterizaꢀon
— Excepꢀonal Instantaneous band-width performance from
500MHz – 2GHz
— Increased efficiency results in significant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consumpꢀon
— Typical Performance raꢀngs
— Wide-Band 500MHz-2GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
Preliminary Data Sheet
Subject to Change
— 45% Efficiency
— 50Waꢁ P1dB
www.triquint.com/powerband