生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
标称电路换相断开时间: | 100 µs | 关态电压最小值的临界上升速率: | 1000 V/us |
最大直流栅极触发电流: | 120 mA | 最大直流栅极触发电压: | 1.4 V |
最大维持电流: | 200 mA | 最大漏电流: | 15 mA |
通态非重复峰值电流: | 500 A | 最大通态电流: | 16000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 1000 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | NO | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
T16N1100BOC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16500mA I(T), 1100V V(DRM), | |
T16N1100BOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16500mA I(T), 1100V V(DRM), | |
T16N1100COC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 22500mA I(T), 1100V V(DRM), | |
T16N1100COF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16500mA I(T), 1100V V(DRM), | |
T16N1200BOC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16000mA I(T), 1200V V(DRM), | |
T16N1200BOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16500mA I(T), 1200V V(DRM), | |
T16N1200COC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16000mA I(T), 1200V V(DRM), | |
T16N1200COF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16000mA I(T), 1200V V(DRM), | |
T16N1400BOF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16500mA I(T), 1400V V(DRM), | |
T16N1400COC | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 16000mA I(T), 1400V V(DRM), |