T1070P

更新时间： 2024-11-08 08:28:35

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
4页	91K
描述
Silicon NPN Phototransistor

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T1070P 数据手册

T1070P

Vishay Semiconductors

Silicon NPN Phototransistor

FEATURES

• Package type: chip

• Package form: single chip

• Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.22

• Wafer diameter (in mm): 100

• Radiant sensitive area (in mm²): 0.25

• High photo sensitivity

• Suitable for visible light

• Fast response times

• Angle of half sensitivity:  = ꢀ0ꢁ

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/9ꢀ/EC

21682

DESCRIPTION

APPLICATIONS

• Ambient light sensor

• Backlight dimmer

T1070P ambient light sensor chip is a silicon NPN epitaxial

planar phototransistor. It is sensitive to visible light much like

the human eye and has peak sensitivity at 570 nm.

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

PRODUCT SUMMARY

COMPONENT

I_PCE(μA)

 (deg)

_0.5(nm)

T1070P

ꢀ0

440 to 800

Note

•

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

T1070P-SD-F

Wafer sawn on foil with disco frame

MOQ: 55 000 pcs

Chip

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢁC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

V_CEO

V_ECO

I_C

VALUE

UNIT

Collector emitter voltage

Emitter collector voltage

Collector current

ꢀ

1.5

ꢁC

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Storage temperature range on foil

T_amb

T_stg1

T_stg2

- 40 to + 100

- 40 to + 50

Document Number: 81119

Rev. 1.4, 23-Mar-11

For technical questions, contact: optochipsupport@vishay.com

This datasheet is subject to change without notice.

www.vishay.com

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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