5秒后页面跳转
SZP6SMB39CAT3G PDF预览

SZP6SMB39CAT3G

更新时间: 2024-02-24 19:51:22
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
5页 326K
描述
Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PIN

SZP6SMB39CAT3G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred包装说明:SMB, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.76Is Samacsys:N
其他特性:HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE最大击穿电压:41 V
最小击穿电压:37.1 V击穿电压标称值:39.5 V
最大钳位电压:53.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:BIDIRECTIONAL
最大功率耗散:0.55 W参考标准:AEC-Q101
最大重复峰值反向电压:33.3 V子类别:Transient Suppressors
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUALBase Number Matches:1

SZP6SMB39CAT3G 数据手册

 浏览型号SZP6SMB39CAT3G的Datasheet PDF文件第2页浏览型号SZP6SMB39CAT3G的Datasheet PDF文件第3页浏览型号SZP6SMB39CAT3G的Datasheet PDF文件第4页浏览型号SZP6SMB39CAT3G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 600W > P6SMB11AT3G Series  
Pb  
P6SMB11AT3G Series  
Description  
The P6SMB11AT3G series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The P6SMB11AT3G series is supplied in the Littelfuse  
exclusive, cost-effective, highly reliable package and is  
ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many  
other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 9.4 to 77.8 V  
• Standard Zener Breakdown Voltage Range − 11 to 91 V  
• Peak Power − 600 W @ 1 ms  
Maximum Ratings andThermal Characteristics  
Parameter  
Symbol  
PPK  
Value  
600  
Unit  
W
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
Peak Power Dissipation (Note 1) @TL =  
25°C, Pulse Width = 1 ms  
DC Power Dissipation @TL = 75°C  
Measured Zero Lead Length (Note 2)  
W
PD  
3.0  
40  
25  
Derate Above 75°C  
mW/°C  
°C/W  
• UL 497B for Isolated Loop Circuit Protection  
• ResponseTime isTypically < 1 ns  
Thermal Resistance from Junction−to−  
Lead  
R
JL  
• These are Pb−Free Devices  
0.55  
4.4  
W
DC Power Dissipation (Note 3) @TA =  
25°C Derate Above 25°C  
PD  
mW/°C  
°C/W  
Thermal Resistance from Junction–to–  
Ambient  
Functional Diagram  
226  
R
0JA  
Operating and StorageTemperature  
Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If  
any of these limits are exceeded, device functionality should not be assumed, damage may  
occur and reliability may be affected.  
Additional Information  
1. 10 X 1000 µs, non−repetitive.  
2. 1” square copper pad, FR−4 board.  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03  
case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per  
minute maximum.  
Samples  
Datasheet  
Resources  
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/14/17  

SZP6SMB39CAT3G 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB39CAT3G LITTELFUSE

完全替代

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与SZP6SMB39CAT3G相关器件

型号 品牌 获取价格 描述 数据表
SZP6SMB43AT3G LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Unidirectional, 1 Element, Silicon, SM
SZP6SMB43CAT3G LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 36.8V V(RWM), Bidirectional, 1 Element, Silicon, SMB
SZP6SMB47AT3G ONSEMI

获取价格

600 Watt SMB Transient Voltage Suppressors 47 V Unidirectional, SMB, 2500-REEL
SZP6SMB47AT3G LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 40.2V V(RWM), Unidirectional, 1 Element, Silicon, SM
SZP6SMB47CAT3G LITTELFUSE

获取价格

SZP6SMB系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。 具有一流
SZP6SMB51AT3G LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, SM
SZP6SMB51AT3G ONSEMI

获取价格

600 Watt SMB Transient Voltage Suppressor, 51 V, Unidirectional, SMB, 2500-REEL
SZP6SMB51CAT3G LITTELFUSE

获取价格

SZP6SMB系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。 具有一流
SZP6SMB56AT3G ONSEMI

获取价格

600 Watt SMB Transient Voltage Suppressor, 56 V, Unidirectional, SMB, 2500-REEL
SZP6SMB56AT3G LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Unidirectional, 1 Element, Silicon, SM