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SZP6SMB22CAT3G PDF预览

SZP6SMB22CAT3G

更新时间: 2024-02-24 15:13:27
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
5页 326K
描述
Trans Voltage Suppressor Diode, 600W, 18.8V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PIN

SZP6SMB22CAT3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:SMB, 2 PIN
针数:2Reach Compliance Code:not_compliant
风险等级:5.78Base Number Matches:1

SZP6SMB22CAT3G 数据手册

 浏览型号SZP6SMB22CAT3G的Datasheet PDF文件第2页浏览型号SZP6SMB22CAT3G的Datasheet PDF文件第3页浏览型号SZP6SMB22CAT3G的Datasheet PDF文件第4页浏览型号SZP6SMB22CAT3G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 600W > P6SMB11AT3G Series  
Pb  
P6SMB11AT3G Series  
Description  
The P6SMB11AT3G series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The P6SMB11AT3G series is supplied in the Littelfuse  
exclusive, cost-effective, highly reliable package and is  
ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many  
other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 9.4 to 77.8 V  
• Standard Zener Breakdown Voltage Range − 11 to 91 V  
• Peak Power − 600 W @ 1 ms  
Maximum Ratings andThermal Characteristics  
Parameter  
Symbol  
PPK  
Value  
600  
Unit  
W
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
Peak Power Dissipation (Note 1) @TL =  
25°C, Pulse Width = 1 ms  
DC Power Dissipation @TL = 75°C  
Measured Zero Lead Length (Note 2)  
W
PD  
3.0  
40  
25  
Derate Above 75°C  
mW/°C  
°C/W  
• UL 497B for Isolated Loop Circuit Protection  
• ResponseTime isTypically < 1 ns  
Thermal Resistance from Junction−to−  
Lead  
R
JL  
• These are Pb−Free Devices  
0.55  
4.4  
W
DC Power Dissipation (Note 3) @TA =  
25°C Derate Above 25°C  
PD  
mW/°C  
°C/W  
Thermal Resistance from Junction–to–  
Ambient  
Functional Diagram  
226  
R
0JA  
Operating and StorageTemperature  
Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If  
any of these limits are exceeded, device functionality should not be assumed, damage may  
occur and reliability may be affected.  
Additional Information  
1. 10 X 1000 µs, non−repetitive.  
2. 1” square copper pad, FR−4 board.  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03  
case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per  
minute maximum.  
Samples  
Datasheet  
Resources  
*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/14/17  

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