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SZ1SMB12CAT3G PDF预览

SZ1SMB12CAT3G

更新时间: 2024-11-01 20:48:15
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
6页 351K
描述
Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Bidirectional, 1 Element, Silicon, SMB, 2 PIN

SZ1SMB12CAT3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.77其他特性:EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, UL RECOGNIZED
最大击穿电压:14.7 V最小击穿电压:13.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:0.55 W参考标准:AEC-Q101
最大重复峰值反向电压:12 V表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SZ1SMB12CAT3G 数据手册

 浏览型号SZ1SMB12CAT3G的Datasheet PDF文件第2页浏览型号SZ1SMB12CAT3G的Datasheet PDF文件第3页浏览型号SZ1SMB12CAT3G的Datasheet PDF文件第4页浏览型号SZ1SMB12CAT3G的Datasheet PDF文件第5页浏览型号SZ1SMB12CAT3G的Datasheet PDF文件第6页 
TVS Diodes  
Surface Mount > 600W > 1SMB10CAT3G Series  
Pb  
1SMB10CAT3G Series  
Description  
The 1SMB10CAT3Gv series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The 1SMB10CAT3G series is supplied in the  
Littelfuse exclusive, cost-effective, highly reliable package  
and is ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and  
many other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 10 V to 75 V  
Maximum Ratings andThermal Characteristics  
• Standard Zener Breakdown Voltage Range −  
11.7 V to 91.7 V  
Parameter  
Symbol  
PPK  
Value  
600  
Unit  
W
• Peak Power − 600 Watts @ 1 ms  
Peak Power Dissipation (Note 1) @ TL =  
25°C, Pulse Width = 1 ms  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
DC Power Dissipation @ TL = 75°C  
Measured Zero Lead Length (Note 2)  
PD  
W
3.0  
40  
25  
Derate Above 75°C  
mW/°C  
°C/W  
• UL 497B for Isolated Loop Circuit Protection  
• ResponseTime isTypically < 1 ns  
Thermal Resistance from Junction−  
to−Lead  
RJL  
• Pb−Free Packages are Available  
0.55  
4.4  
W
DC Power Dissipation (Note 3) @ TA =  
25°C Derate Above 25°C  
P
D
mW/°C  
°C/W  
Thermal Resistance from Junction–to–  
Ambient  
Functional Diagram  
226  
R
JA  
θ
Operating and Storage  
Temperature Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are  
stress ratings only. Functional operation above the Recommended Operating Conditions is  
not implied. Extended exposure to stresses above the Recommended Operating Conditions  
may affect device reliability.  
Additional Information  
1. 10 X 1000 µs, non−repetitive  
2. 1” square copper pad, FR−4 board  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403A-03  
case outline dimensions spec  
Samples  
Datasheet  
Resources  
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/17/17  

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