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SZ1SMA24AT3G PDF预览

SZ1SMA24AT3G

更新时间： 2024-11-14 21:21:39
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
5页 345K
描述
Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SMA, 2 PIN

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中文翻译

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SZ1SMA24AT3G 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：1.75Is Samacsys：N
其他特性：EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE最大击穿电压：29.5 V
最小击穿电压：26.7 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-C2最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：0.5 W
参考标准：AEC-Q101最大重复峰值反向电压：24 V
表面贴装：YES技术：ZENER
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SZ1SMA24AT3G 数据手册

 浏览型号SZ1SMA24AT3G的Datasheet PDF文件第2页浏览型号SZ1SMA24AT3G的Datasheet PDF文件第3页浏览型号SZ1SMA24AT3G的Datasheet PDF文件第4页浏览型号SZ1SMA24AT3G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 400W > 1SMA5.0AT3G Series  
Pb  
1SMA5.0AT3G Series  
Description  
The 1SMA5.0AT3G series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The 1SMA5.0AT3G series is supplied in the Littelfuse  
exclusive, cost-effective, highly reliable package and is  
ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many  
other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 5.0 V to 78 V  
Maximum Ratings andThermal Characteristics  
• Standard Zener Breakdown Voltage Range −  
6.7 V to 91.25 V  
Parameter  
Symbol  
PPK  
Value  
400  
Unit  
W
• Peak Power − 400 W @ 1 ms  
Peak Power Dissipation (Note 1) @ TL =  
25°C, Pulse Width = 1 ms  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• ResponseTime isTypically < 1 ns  
• Flat Handling Surface for Accurate Placement  
DC Power Dissipation @ TL = 75°C  
Measured Zero Lead Length (Note 2)  
W
1.0  
20  
50  
PD  
• Package Design forTop Slide or Bottom Circuit  
Board Mounting  
Derate Above 75°C  
mW/°C  
°C/W  
Thermal Resistance from Junction  
to−Lead  
RJL  
• Low Profile Package  
• These are Pb−Free Device  
DC Power Dissipation (Note 3)  
@ TA = 25°C  
P
0.5  
4.0  
250  
W
D
mW/°C  
°C/W  
Derate Above 25°C  
Functional Diagram  
R
Thermal Resistance from Junction–to–  
Ambient  
0JA  
Cathode  
Anode  
Forward Surge Current (Note 4) @ TA  
= 25°C  
IFSM  
40  
A
Additional Information  
Operating and Storage Temperature  
Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If  
any of these limits are exceeded, device functionality should not be assumed, damage may  
occur and reliability may be affected.  
Samples  
Datasheet  
Resources  
1. 10 X 1000 µs, non−repetitive.  
2. 1” square copper pad, FR−4 board.  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02  
case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per  
minute maximum.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/14/17  
12345

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SZ1SMA24AT3G 替代型号

型号 品牌 替代类型 描述 数据表
1SMA24AT3G LITTELFUSE

完全替代

 Trans Voltage Suppressor Diode, 400W, 24V V(RWM), Unidirectional, 1 Element, Silicon, SMA,
SMAJ24A LITTELFUSE

完全替代

 Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

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