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SZ1SMA48AT3G PDF预览

SZ1SMA48AT3G

更新时间: 2024-09-28 21:21:39
品牌 Logo 应用领域
力特 - LITTELFUSE 光电二极管
页数 文件大小 规格书
5页 345K
描述
Trans Voltage Suppressor Diode, 400W, 48V V(RWM), Unidirectional, 1 Element, Silicon, SMA, 2 PIN

SZ1SMA48AT3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:1.73其他特性:EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
最大击穿电压:58.9 V最小击穿电压:53.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W参考标准:AEC-Q101
最大重复峰值反向电压:48 V表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SZ1SMA48AT3G 数据手册

 浏览型号SZ1SMA48AT3G的Datasheet PDF文件第2页浏览型号SZ1SMA48AT3G的Datasheet PDF文件第3页浏览型号SZ1SMA48AT3G的Datasheet PDF文件第4页浏览型号SZ1SMA48AT3G的Datasheet PDF文件第5页 
TVS Diodes  
Surface Mount > 400W > 1SMA5.0AT3G Series  
Pb  
1SMA5.0AT3G Series  
Description  
The 1SMA5.0AT3G series is designed to protect voltage  
sensitive components from high voltage, high energy  
transients. They have excellent clamping capability, high  
surge capability, low zener impedance and fast response  
time. The 1SMA5.0AT3G series is supplied in the Littelfuse  
exclusive, cost-effective, highly reliable package and is  
ideally suited for use in communication systems,  
automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many  
other industrial/consumer applications.  
Features  
• Working Peak Reverse Voltage Range − 5.0 V to 78 V  
Maximum Ratings andThermal Characteristics  
• Standard Zener Breakdown Voltage Range −  
6.7 V to 91.25 V  
Parameter  
Symbol  
PPK  
Value  
400  
Unit  
W
• Peak Power − 400 W @ 1 ms  
Peak Power Dissipation (Note 1) @ TL =  
25°C, Pulse Width = 1 ms  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• ResponseTime isTypically < 1 ns  
• Flat Handling Surface for Accurate Placement  
DC Power Dissipation @ TL = 75°C  
Measured Zero Lead Length (Note 2)  
W
1.0  
20  
50  
PD  
• Package Design forTop Slide or Bottom Circuit  
Board Mounting  
Derate Above 75°C  
mW/°C  
°C/W  
Thermal Resistance from Junction  
to−Lead  
RJL  
• Low Profile Package  
• These are Pb−Free Device  
DC Power Dissipation (Note 3)  
@ TA = 25°C  
P
0.5  
4.0  
250  
W
D
mW/°C  
°C/W  
Derate Above 25°C  
Functional Diagram  
R
Thermal Resistance from Junction–to–  
Ambient  
0JA  
Cathode  
Anode  
Forward Surge Current (Note 4) @ TA  
= 25°C  
IFSM  
40  
A
Additional Information  
Operating and Storage Temperature  
Range  
-65 to  
+150  
TJ, Tstg  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If  
any of these limits are exceeded, device functionality should not be assumed, damage may  
occur and reliability may be affected.  
Samples  
Datasheet  
Resources  
1. 10 X 1000 µs, non−repetitive.  
2. 1” square copper pad, FR−4 board.  
3. FR−4 board, using Littelfuse minimum recommended footprint, as shown in 403D-02  
case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per  
minute maximum.  
© 2017 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/14/17  

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