Datasheet > SZ1SMA51AT3G

SZ1SMA51AT3G

更新时间： 2024-09-28 15:53:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	758K
描述
Transient Suppressor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SZ1SMA51AT3G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.79
Base Number Matches：	1

SZ1SMA51AT3G 数据手册

TVS Diodes

Surface Mount > 400W > SZ1SMA Series

RoHS

Pb e3

SZ1SMA Series

Description

The SZ1SMA series is designed to protect voltage

Bi-directional

sensitive components from high voltage, high energy

transients. They have excellent clamping capability, high

surge capability, low zener impedance and fast response

time. The SZ1SMA series is supplied in the Littelfuse

exclusive, cost-effective, highly reliable package and is

ideally suited for use in communication systems,

automotive, numerical controls, process controls, medical

equipment, business machines, power supplies and many

other industrial and consumer applications.

Uni-directional

Features

• ZenerTransient

Overvoltage Suppressors

• Package Design forTop

Slide or Bottom Circuit

Board Mounting

• Working Peak Reverse

Voltage Range −5V to 70V

for uni-directional and 10 V

to 78 V for bi-directional

Agency Approvals

• Low Proﬁle Package

• Pb-free means 2nd level

interconnect is Pb-free

and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Agency

Agency File Number

E128662

• Standard Zener

Breakdown Voltage Range

−11.1 V to 95.83 V for bi-

directional, 6.4 V to 86.0 V

for uni-directional

• SZ Preﬁx for Automotive

and Other Applications

Requiring Unique Site

and Control Change

Requirements; AEC−

Q101 Qualiﬁed and PPAP

Capable

• Recognized to UL 497B

as an Isolated Loop Circuit

Protector

Maximum Ratings andThermal Characteristics

• Peak Power − 400 W @ 1

Parameter

Symbol Value

Unit

Peak Power Dissipation (Note 1) @T_L= 25°C,

Pulse Width = 1 ms

• ESD Rating of Class 3 (>

16 kV) per Human Body

Model

P_PK

400

DC Power Dissipation @TL = 75°C Measured

Zero Lead Length (Note 2)

Derate Above 75°C

P_D

1.5

mW/°C

°C/W

• ResponseTime isTypically

< 1 ns

R_ƟJL

Thermal Resistance from Junction−to−Lead

• Flat Handling Surface for

Accurate Placement

DC Power Dissipation (Note 3) @TA = 25°C

Derate Above 25°C

Thermal Resistance from Junction–to– Ambient R_ƟJA

P_D

0.5

4.0

250

mW/°C

°C/W

Additional Information

Forward Surge Current (Note 4) @TA = 25°C

(for uni-directional)

I_FSM

T_J

Operating and StorageTemperature Range

T_stg

-65 to +150 °C

Samples

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits

are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. 10 X 1000 µs, non−repetitive.

Datasheet

Resources

2. 1” square copper pad, FR−4 board.

3. FR−4 board, using Littelfuse minimum recommended footprint

4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. (for uni-

directional)

Functional Diagram

Bi-directional

Uni-directional

Cathode

Anode

Speciﬁcations are subject to change without notice.

Revised: 02/14/20

12 3 4 5 6

中文翻译

下载PDF

与SZ1SMA51AT3G相关器件

型号	品牌	获取价格	描述	数据表
SZ1SMA51CAT3G	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZ1SMA51CAT3G	LITTELFUSE	获取价格	SZ1SMA系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。它具有一流
SZ1SMA54AT3G	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 400W, 54V V(RWM), Unidirectional, 1 Element, Silicon, SMA,
SZ1SMA54CAT3G	LITTELFUSE	获取价格	SZ1SMA系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。它具有一流
SZ1SMA58AT3G	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 400W, 58V V(RWM), Unidirectional, 1 Element, Silicon, SMA,
SZ1SMA58CAT3G	LITTELFUSE	获取价格	SZ1SMA系列专为保护电压敏感型组件免受高电压、高能量瞬态事件的损坏而设计。它具有一流
SZ1SMA5913BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5914BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5915BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator
SZ1SMA5916BT3G	ONSEMI	获取价格	1.5 W Zener Diode Voltage Regulator

与SZ1SMA51AT3G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

21
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

32

产品中心

服务支持

精选活动

关于我们

帮助中心

SZ1SMA51AT3G

SZ1SMA51AT3G 技术参数

SZ1SMA51AT3G 数据手册

与SZ1SMA51AT3G相关器件

与SZ1SMA51AT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SZ1SMA51AT3G

SZ1SMA51AT3G 技术参数

SZ1SMA51AT3G 数据手册

与SZ1SMA51AT3G相关器件

与SZ1SMA51AT3G相关文章

您还可以找

您在本页遇到什么问题？