Datasheet > SX36-T1

SX36-T1

更新时间： 2024-11-01 21:20:15

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
3页	43K
描述
Rectifier Diode, Schottky, 1 Element, 3A, 60V V(RRM),

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中文翻译

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数据手册

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SX36-T1 数据手册

WTE

POWER SEMICONDUCTORS

SX32 – SX310

3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 100A Peak

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMA/DO-214AC

Mechanical Data

Dim

Min

2.50

4.00

1.40

0.152

4.80

2.00

0.051

0.76

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: Low Profile Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol SX32 SX33 SX34 SX35 SX36 SX38 SX39 SX310 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

3.0

100

0.75

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 3.0A

V^FM

I^RM

0.50

0.85

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

0.5

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Mounted on P.C. Board with 14mm²copper pad areas

SX32 – SX310

1 of 3

12 3

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