SAMWIN
SW226N
N-channel MOSFET
TO-251
TO-252
BVDSS : 600V
Features
ID
: 4.0A
■ High ruggedness
RDS(ON) : 2.3ohm
■ RDS(ON) (Max 2.3 Ω)@VGS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
2
3
1
2
3
2
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
Order Codes
Item
1
Sales Type
SW I 226N
SW D 226N
Marking
SW226N
SW226N
Package
TO-251
TO-252
Packaging
TUBE
REEL
2
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
600
4.0
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
2.2
A
IDM
VGS
EAS
(note 1)
16
A
Gate to Source Voltage
± 30
220
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
10.6
4.5
54
PD
TSTG, TJ
TL
0.43
-55 ~ + 150
W/oC
oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Symbol
Parameter
Value
Typ.
Unit
Min.
Max.
2.3
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
oC/W
oC/W
110
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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