Datasheet > SW-349RTR

SW-349RTR

更新时间： 2024-11-13 23:35:39

品牌	Logo	应用领域
其他 - ETC		开关
页数	文件大小	规格书
2页	115K
描述
GaAs SPST Single Positive Control Matched Switch 0.51.5 GHz

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Preliminary Speciﬁcations

GaAs SPST Single Positive Control Matched Switch

0.5 - 1.5 GHz

SW-349

V3.00

Features

SO-8

●

Single Supply Voltage +3 V to +5 V

PIN 8

.2284-.2440

●

.1497-.1574

(3.80-4.00)

- B -

Single Control +3 V to +5 V

(5.80-6.20)

Orientation

mark

.010(0.25) M B M

●

Matched Input and Output

●

Low Distortion 47 dBm IP @ 0.5 GHz with +5 V

PIN 1

●

.0099-0.0196

x 45° Chamfer

(0.25-0.50)

Low Power Consumption <10 mA @ 5 V typ.

.1890-.1968

(4.80-5.00)

- A -

.0532-.0688

(1.35-1.75)

●

Low Cost Plastic SOIC-8 Package

0°-8°

- C -

.004 (0.10)

.016-.050

Description

.0040-.0098

(0.10-0.25)

(0.40-1.27)

.0075-0.0098

(0.19-0.25)

The SW-349 is a GaAs MMIC matched SPST switch in a low

cost plastic SOIC 8-lead package. This switch is designed

for high isolation from 0.5-1.5 GHz, with typical isolation

greater than 40 dB @ 0.9 GHz. The SW-349 requires exter-

nal DC blocks on the RF ports. The SW-349 is ideally suited

for applications where very low power consumption (<10

mA @ 5 V) and low intermodulation products are required.

Typical applications include switching and blanking for

radio and cellular equipment, wireless LANs, GPS equip-

ment and other RF control circuits.

.013-.020 TYP.

(0.33-0.51)

.050(1.27) BSC.

.010(0.25) M C A M B S

8- Lead SOP outline dimensions

Narrow body .150

(All dimensions per JEDEC No. MS-012-AA, Issue C)

Dimensions in ( ) are in mm.

Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)

.xx = ± 0.02 (.x = ±0.5)

Ordering Information

Part Number

SW-349 PIN

SW-349TR

Package

SOIC 8-Lead Plastic

Foward Tape & Reel

The SW-349 is fabricated with a GaAs MMIC using a mature

1-micron process. The process features full chip passivation

for increased performance and reliability.

SW-349RTR

Reverse Tape & Reel

*If speciﬁc reel size is required, consult factory for part number

assignment.

Electrical Speciﬁcations, T_A= +25°C

Parameter

Insertion Loss

Isolation

Test Conditions¹

Units

Min.

Typ.

Max.

500-1500 MHz

0.9

1.2

500 - 1500 MHz

750 - 960 MHz

500 - 750 MHz

750 - 960 MHz

960 - 1500 MHz

1.5:1

1.3:1

1.2:1

1.7:1

1.4:1

1.3:1

VSWR

Trise, Tfall

Ton , Toff

Transients

10%-90% RF, 90% - 10% RF

50% Control to 90% RF, 50% Control to 10% RF

In Band

µS

1 dB Compression

Vctl = +5 V

Vctl = +3 V

500 MHz

dBm

Input IP

Vctl = +5 V²

dBm

Vctl = +3 V²

Input IP

Vctl = +5 V²

Vctl = +3 V²

dBm

1. All measurements are in a 50 ohm system. DC blocks are required on RF1 and RF2. Vin Low = 0V ±0.2V, Vin High = V_S±0.2V, V_S= +3 to +5V.

For inputs under 20 dBm, hot switching can be used.

2. Two tone +5 dBm each (+8 dBm total) F1 = 900 MHz, F2 = 900.05 MHz.

Speciﬁcations Subject to Change Without Notice.

M/A-COM, Inc.

North America: Tel. (800) 366-2266

Fax (800) 618-8883

■

Asia/Paciﬁc: Tel. +81 3 3263 8761

Fax +81 3 3263 8769

■

Europe: Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

中文翻译

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与SW-349RTR相关器件

型号	品牌	获取价格	描述	数据表
SW349TR	ETC	获取价格	Interface IC
SW-349TR	ETC	获取价格	GaAs SPST Single Positive Control Matched Switch 0.51.5 GHz
SW34CXC1170	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2665A, 3400V V(RRM), Silicon,
SW34CXC12C	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2960A, 3400V V(RRM), Silicon,
SW34CXC13C	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3100A, 3400V V(RRM), Silicon,
SW34CXC15C	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3750A, 3400V V(RRM), Silicon,
SW34CXC1870	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4100A, 3400V V(RRM), Silicon,
SW34CXC18C	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5100A, 3400V V(RRM), Silicon,
SW34CXC350	IXYS	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1030A, 3400V V(RRM), Silicon,
SW34CXC445	IXYS	获取价格	DIODE 1075 A, 3400 V, SILICON, RECTIFIER DIODE, Rectifier Diode

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