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SUM34N10-35 PDF预览

SUM34N10-35

更新时间: 2024-11-28 21:54:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
5页 43K
描述
N-Channel 100-V (D-S) 175C MOSFET

SUM34N10-35 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.92Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):34 A最大漏极电流 (ID):34 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SUM34N10-35 数据手册

 浏览型号SUM34N10-35的Datasheet PDF文件第2页浏览型号SUM34N10-35的Datasheet PDF文件第3页浏览型号SUM34N10-35的Datasheet PDF文件第4页浏览型号SUM34N10-35的Datasheet PDF文件第5页 
SUM34N10-35  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
FEATURES  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
D TrenchFETr Power MOSFETS  
D 175_C Junction Temperature  
0.035 @ V = 10 V  
34  
32  
GS  
100  
D New Low Thermal Resistance Package  
0.040 @ V = 6 V  
GS  
D
TO-263  
G
G
D S  
Top View  
Ordering Information: SUM34N10-35  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
100  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
V
"20  
a
T
= 25_C  
= 125_C  
34  
C
Continuous Drain Current (T = 175_C)  
I
J
D
a
T
20  
C
A
Pulsed Drain Current  
Avalanche Current  
I
60  
34  
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
57.8  
mJ  
c
T
= 25_C  
100  
C
b
Maximum Power Dissipation  
P
W
D
d
T
A
= 25_C  
3.75  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
Junction-to-Ambient (PCB Mounted)  
R
40  
thJA  
thJC  
_
C/W  
Junction-to-Case (Drain)  
R
1.5  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 72160  
S-03415—Rev. A, 03-Mar-03  
www.vishay.com  
1

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