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STX83003 PDF预览

STX83003

更新时间: 2024-01-24 21:58:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关小信号双极晶体管高压
页数 文件大小 规格书
7页 252K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STX83003 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):4
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STX83003 数据手册

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STX83003  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
ST83003 SILICON IN TO-92 PACKAGE  
MEDIUM VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
TO-92  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The STX83003 is expressly designed for a new  
solution to be used in compact fluorescent lamps,  
where it is coupled with the STX93003, its  
complementary PNP transistor.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Value  
700  
Unit  
V
V
V
VCEO  
400  
VEBO  
Emitter-Base Voltage  
V(BR)EBO  
(IC = 0, IB = 0.5 A, tp < 10µs, Tj < 150oC)  
Collector Current  
IC  
ICM  
IB  
1
3
A
A
Collector Peak Current (tp < 5 ms)  
Base Current  
0.5  
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
1.5  
A
o
Total Dissipation at TC = 25 C  
1.5  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
October 2002  

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