STX93003

更新时间： 2024-02-11 12:18:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关小信号双极晶体管高压 PC
页数	文件大小	规格书
7页	250K
描述
HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

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中文翻译

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技术参数
数据手册

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STX93003 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.57
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	16	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.5 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

STX93003 数据手册

STX93003

HIGH VOLTAGE FAST-SWITCHING

PNP POWER TRANSISTOR

■

ST93003 SILICON IN TO-92 PACKAGE

MEDIUM VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

VERY HIGH SWITCHING SPEED

APPLICATIONS:

■

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

TO-92

The device is manufactured using high voltage

Multi-Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The STX93003 is expressly designed for a new

solution to be used in compact fluorescent lamps,

where it is coupled with the STX83003, its

complementary NPN transistor.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Value

-500

Unit

V_CEO

-400

V_EBO

Emitter-Base Voltage (I_C= 0)

(I_C= 0, I_B= -0.5 A, t_p< 10µs, T_j< 150^oC)

Collector Current

V_(BR)EBO

I_C

I_CM

I_B

-1

-3

Collector Peak Current (t_p< 5 ms)

Base Current

-0.5

I_BM

P_tot

T_stg

T_j

Base Peak Current (t_p< 5 ms)

-1.5

Total Dissipation at T_C= 25 C

1.5

^oC

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

October 2002

12 3 4 5 6 7

中文翻译

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