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STM8601 PDF预览

STM8601

更新时间: 2024-11-25 06:14:51
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
11页 255K
描述
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

STM8601 数据手册

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STM8601  
Ver 1.0  
a
S mHop Microelectronics Corp.  
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )  
PRODUCT SUMMARY (N-Channel)  
PRODUCT SUMMARY (P-Channel)  
ID  
ID  
VDSS  
RDS(ON) (m  
) Max  
VDSS  
RDS(ON) (m) Max  
105 @ VGS=-10V  
150 @ VGS=-4.5V  
58 @ VGS=10V  
75 @ VGS=4.5V  
4.5A  
-3.3A  
60V  
-60V  
4
3
2
1
5
6
7
8
G2  
S 2  
G1  
S 1  
D2  
D2  
D1  
D1  
S O-8  
1
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted  
)
(
Symbol  
VDS  
Parameter  
P-Channel  
Units  
N-Channel  
Drain-Source Voltage  
Gate-Source Voltage  
60  
20  
-60  
20  
V
V
VGS  
°
TA=25 C  
-3.3  
-2.6  
12  
4.5  
3.6  
16  
A
A
a
ID  
Drain Current-Continuous  
°
TA=70 C  
b
IDM  
-Pulsed  
A
d
EAS  
mJ  
Single Pulse Avalanche Energy  
15  
20  
°
TA=25 C  
2.0  
W
W
a
PD  
Maximum Power Dissipation  
°
TA=70 C  
1.28  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
THERMAL CHARACTERISTICS  
a
R
Thermal Resistance, Junction-to-Ambient  
62.5  
°C/W  
JA  
Details are subject to change without notice.  
Nov,06,2008  
www.samhop.com.tw  
1

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