Datasheet > STM8601

STM8601

更新时间： 2024-11-06 06:14:51

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	255K
描述
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

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中文翻译

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数据手册

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STM8601 数据手册

STM8601

Ver 1.0

S mHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

VDSS

RDS(ON) (m

Ω

) Max

VDSS

RDS(ON) (mΩ) Max

105 @ VGS=-10V

150 @ VGS=-4.5V

58 @ VGS=10V

75 @ VGS=4.5V

4.5A

-3.3A

60V

-60V

S 2

S 1

S O-8

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

P-Channel

Units

N-Channel

Drain-Source Voltage

Gate-Source Voltage

-60

V_GS

T_A=25 C

-3.3

-2.6

4.5

3.6

I_D

Drain Current-Continuous

T_A=70 C

I_DM

-Pulsed

E_AS

Single Pulse Avalanche Energy

T_A=25 C

2.0

P_D

Maximum Power Dissipation

T_A=70 C

1.28

Operating Junction and Storage

Temperature Range

T_J, T_STG

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

Details are subject to change without notice.

Nov,06,2008

www.samhop.com.tw

12 3 4 5 6 7...11

中文翻译

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