Ordering number : ENA2316
STK672-630CN-E
Thick-Film Hybrid IC
2-phase Stepper Motor Driver
http://onsemi.com
Overview
The STK672-630CN-E is a hybrid IC for use as a unipolar, 2-phase stepper motor driver with PWM current control.
Applications
Office photocopiers, printers, etc.
Features
Built-in motor terminal open detection function(output current OFF).
There is a terminal to coordinate motor terminal open detection current.
Built-in overcurrent detection function, overheat detection function (output current OFF).
FAULT1 signal (active low) is output when any of motor terminal open, overcurrent or overheat is detected.
The FAULT2 signal is used to output the result of activation of protection circuit detection at 3 levels.
Built-in power on reset function.
The motor speed is controlled by the frequency of an external clock signal.
2 phase or 1-2 phase excitation switching function.
Using either or both edges of the clock signal switching function.
Phase is maintained even when the excitation mode is switched.
Rotational direction switching function.
Supports schmitt input for 2.5V high level input.
Incorporating a current detection resistor (0.141Ω: resistor tolerance 2%), motor current can be set using two
external resistors.
The ENABLE pin can be used to cut output current while maintaining the excitation mode.
With a wide current setting range, power consumption can be reduced during standby.
No motor sound is generated during hold mode due to external excitation current control.
Supports compatible pins with STK672-640CN-E.
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Maximum supply voltage 1
Maximum supply voltage 2
Input voltage
Symbol
Conditions
Ratings
Unit
V
V
V
max
ENABLE=GND
No signal
50
0.3 to 6.0
0.3 to 6.0
10
CC
max
V
DD
Vin max
IOP max
IOH max
IOF max
PdMF max
PdPK max
Tcmax
Logic input pins
V
Output current 1
10μs 1 pulse (resistance load)
= 5V, CLOCK 200Hz
A
Output current 2
V
A
2.65
DD
Output current 3
16pin Output current
mA
W
W
°C
°C
°C
10
Allowable power dissipation 1
Allowable power dissipation 2
Operating substrate temperature
Junction temperature
Storage temperature
With an arbitrarily large heat sink. Per MOSFET
No heat sink
7.3
3.1
105
Tjmax
150
Tstg
40 to 125
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 31 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014 Ver. 2.2
31814HK 018-14-0003 No.2316-1/31