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STK14C88-CF25I PDF预览

STK14C88-CF25I

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
SIMTEK 存储静态存储器
页数 文件大小 规格书
19页 399K
描述
32Kx8 AutoStore nvSRAM

STK14C88-CF25I 数据手册

 浏览型号STK14C88-CF25I的Datasheet PDF文件第1页浏览型号STK14C88-CF25I的Datasheet PDF文件第2页浏览型号STK14C88-CF25I的Datasheet PDF文件第3页浏览型号STK14C88-CF25I的Datasheet PDF文件第5页浏览型号STK14C88-CF25I的Datasheet PDF文件第6页浏览型号STK14C88-CF25I的Datasheet PDF文件第7页 
STK14C88  
e
SRAM READ CYCLES #1 & #2  
(V = 5.0V 10%)  
CC  
SYMBOLS  
STK14C88-25  
STK14C88-35  
STK14C88-45  
NO.  
PARAMETER  
UNITS  
#1, #2  
Alt.  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
1
2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Chip Enable Access Time  
25  
35  
45  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ELQV  
ACS  
RC  
AA  
g
Read Cycle Time  
25  
35  
45  
AVAV  
h
3
Address Access Time  
25  
10  
35  
15  
45  
20  
AVQV  
4
Output Enable to Data Valid  
Output Hold after Address Change  
Chip Enable to Output Active  
Chip Disable to Output Inactive  
Output Enable to Output Active  
Output Disable to Output Inactive  
Chip Enable to Power Active  
Chip Disable to Power Standby  
GLQV  
AXQX  
ELQX  
EHQZ  
GLQX  
OE  
OH  
LZ  
h
i
5
5
5
5
5
5
5
6
7
10  
10  
25  
13  
13  
35  
15  
15  
45  
HZ  
8
0
0
0
0
0
0
OLZ  
OHZ  
PA  
i
9
GHQZ  
f
f
10  
11  
ELICCH  
EHICCL  
PS  
Note g: W and HSB must be high during SRAM READ cycles and low during SRAM WRITE cycles.  
Note h: I/O state assumes E and G < V and W > V ; device is continuously selected.  
IL  
IH  
Note i: Measured 200mV from steady state output voltage.  
g, h  
SRAM READ CYCLE #1: Address Controlled  
2
AVAV  
t
ADDRESS  
3
AVQV  
t
5
AXQX  
t
DQ (DATA OUT)  
DATA VALID  
g
SRAM READ CYCLE #2: E Controlled  
2
AVAV  
t
ADDRESS  
1
ELQV  
11  
EHICCL  
t
t
6
ELQX  
E
t
7
EHQZ  
t
G
9
4
GLQV  
t
GHQZ  
t
8
GLQX  
t
DATA VALID  
DQ (DATA OUT)  
10  
ELICCH  
t
ACTIVE  
STANDBY  
I
CC  
Rev 0.3  
Document Control #ML0014  
February, 2007  
4

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