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STK12C68-S25 PDF预览

STK12C68-S25

更新时间: 2024-10-28 23:11:03
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页数 文件大小 规格书
13页 371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

STK12C68-S25 数据手册

 浏览型号STK12C68-S25的Datasheet PDF文件第2页浏览型号STK12C68-S25的Datasheet PDF文件第3页浏览型号STK12C68-S25的Datasheet PDF文件第4页浏览型号STK12C68-S25的Datasheet PDF文件第5页浏览型号STK12C68-S25的Datasheet PDF文件第6页浏览型号STK12C68-S25的Datasheet PDF文件第7页 
STK12C68  
STK12C68-M SMD#5962-94599  
8K x 8 AutoStore™ nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
• 25ns, 35ns, 45ns and 55ns Access Times  
The Simtek STK12C68 is a fast static RAM with a  
nonvolatile element incorporated in each static  
memory cell. The SRAM can be read and written an  
unlimited number of times, while independent, non-  
volatile data resides in Nonvolatile Elements. Data  
transfers from the SRAM to the Nonvolatile Elements  
(the STORE operation) can take place automatically  
on power down. A 68µF or larger capacitor tied from  
VCAP to ground guarantees the STORE operation,  
regardless of power-down slew rate or loss of power  
from “hot swapping”. Transfers from the Nonvolatile  
Elements to the SRAM (the RECALL operation) take  
place automatically on restoration of power. Initia-  
tion of STORE and RECALL cycles can also be soft-  
ware controlled by entering specific read  
sequences. A hardware STORE may be initiated with  
the HSB pin.  
• “Hands-off” Automatic STORE with External  
68µF Capacitor on Power Down  
STORE to Nonvolatile Elements Initiated by  
Hardware, Software or AutoStore™ on Power  
Down  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments (Commercial/Industrial)  
• 100-Year Data Retention in Nonvolatile Ele-  
ments (Commercial/Industrial)  
• Commercial, Industrial and Military Tempera-  
tures  
• 28-Pin SOIC, DIP and LCC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
V
V
CAP  
CCX  
1
2
3
4
5
6
7
8
V
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CAP  
CCX  
A
W
12  
A
HSB  
7
6
POWER  
A
A
8
QUANTUM TRAP  
128 x 512  
A
A
5
9
CONTROL  
A
A
4
3
11  
G
A
A5  
A6  
A7  
A8  
A9  
A
A
E
2
10  
9
A
A
1
0
STORE  
10  
11  
12  
13  
14  
DQ  
7
STORE/  
RECALL  
DQ  
DQ  
6
0
1
2
SS  
HSB  
DQ  
DQ  
5
STATIC RAM  
DQ  
DQ  
4
CONTROL  
RECALL  
V
DQ  
3
ARRAY  
128 x 512  
28 - LCC  
28 - DIP  
A11  
A12  
28 - SOIC  
SOFTWARE  
DETECT  
A
- A  
12  
0
PIN NAMES  
DQ  
DQ  
DQ  
0
1
2
COLUMN I/O  
A
- A  
Address Inputs  
Data In/Out  
Chip Enable  
Write Enable  
Output Enable  
Hardware Store Busy (I/O)  
Power (+ 5V)  
Capacitor  
0
12  
COLUMN DEC  
DQ -DQ  
0
7
DQ  
3
4
E
W
G
DQ  
DQ  
DQ  
DQ  
5
6
7
A
A A  
A A  
1 4  
2 3  
A
10  
0
G
HSB  
E
W
V
V
V
CCX  
CAP  
SS  
Ground  
October 2003  
1
Document Control # ML0008 rev 0.4  

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-S35I ETC

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-S35M ETC

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-S45 ETC

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-S45I ETC

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No
STK12C68-S45M ETC

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8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No