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STK12C68-5S25M PDF预览

STK12C68-5S25M

更新时间: 2024-10-28 20:13:51
品牌 Logo 应用领域
SIMTEK 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 256K
描述
Non-Volatile SRAM, 8KX8, 25ns, CMOS, PDSO28, 0.350 INCH, PLASTIC, SOIC-28

STK12C68-5S25M 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP, SOP28,.5Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.2最长访问时间:25 ns
JESD-30 代码:R-PDSO-G28JESD-609代码:e0
长度:18.085 mm内存密度:65536 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.5
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B座面最大高度:2.54 mm
最大待机电流:0.0025 A子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8.765 mmBase Number Matches:1

STK12C68-5S25M 数据手册

 浏览型号STK12C68-5S25M的Datasheet PDF文件第2页浏览型号STK12C68-5S25M的Datasheet PDF文件第3页浏览型号STK12C68-5S25M的Datasheet PDF文件第4页浏览型号STK12C68-5S25M的Datasheet PDF文件第5页浏览型号STK12C68-5S25M的Datasheet PDF文件第6页浏览型号STK12C68-5S25M的Datasheet PDF文件第7页 
STK12C68  
STK12C68-M SMD#5962-94599  
8K x 8 AutoStore™ nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
FEATURES  
DESCRIPTION  
• 25ns, 35ns, 45ns and 55ns Access Times  
The Simtek STK12C68 is a fast static RAM with a  
nonvolatile element incorporated in each static  
memory cell. The SRAM can be read and written an  
unlimited number of times, while independent, non-  
volatile data resides in Nonvolatile Elements. Data  
transfers from the SRAM to the Nonvolatile Elements  
(the STORE operation) can take place automatically  
on power down. A 68µF or larger capacitor tied from  
VCAP to ground guarantees the STORE operation,  
regardless of power-down slew rate or loss of power  
from “hot swapping”. Transfers from the Nonvolatile  
Elements to the SRAM (the RECALL operation) take  
place automatically on restoration of power. Initia-  
tion of STORE and RECALL cycles can also be soft-  
ware controlled by entering specific read  
sequences. A hardware STORE may be initiated with  
the HSB pin.  
• “Hands-off” Automatic STORE with External  
68µF Capacitor on Power Down  
STORE to Nonvolatile Elements Initiated by  
Hardware, Software or AutoStore™ on Power  
Down  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments (Commercial/Industrial)  
• 100-Year Data Retention in Nonvolatile Ele-  
ments (Commercial/Industrial)  
• Commercial, Industrial and Military Tempera-  
tures  
• 28-Pin SOIC, DIP and LCC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
V
V
CAP  
CCX  
1
2
3
4
5
6
7
8
V
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CAP  
CCX  
A
W
12  
A
HSB  
7
6
POWER  
A
A
8
QUANTUM TRAP  
128 x 512  
A
A
5
9
CONTROL  
A
A
4
3
11  
G
A
A5  
A6  
A7  
A8  
A9  
A
A
E
2
10  
9
A
A
1
0
STORE  
10  
11  
12  
13  
14  
DQ  
7
STORE/  
RECALL  
DQ  
DQ  
6
0
1
2
SS  
HSB  
DQ  
DQ  
5
STATIC RAM  
DQ  
DQ  
4
CONTROL  
RECALL  
V
DQ  
3
ARRAY  
128 x 512  
28 - LCC  
28 - DIP  
A11  
A12  
28 - SOIC  
SOFTWARE  
DETECT  
A
- A  
12  
0
PIN NAMES  
DQ  
DQ  
DQ  
0
1
2
COLUMN I/O  
A
- A  
Address Inputs  
Data In/Out  
Chip Enable  
Write Enable  
Output Enable  
Hardware Store Busy (I/O)  
Power (+ 5V)  
Capacitor  
0
12  
COLUMN DEC  
DQ -DQ  
0
7
DQ  
3
4
E
W
G
DQ  
DQ  
DQ  
DQ  
5
6
7
A
A A  
A A  
1 4  
2 3  
A
10  
0
G
HSB  
E
W
V
V
V
CCX  
CAP  
SS  
Ground  
October 2003  
1
Document Control # ML0008 rev 0.4  

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