Datasheet > STK12C68-5C45M

STK12C68-5C45M

更新时间： 2024-01-17 21:38:52

品牌	Logo	应用领域
其他 - ETC		内存集成电路静态存储器可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	371K
描述
8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM

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技术参数
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STK12C68-5C45M 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	DIP, DIP28,.3	Reach Compliance Code：	unknown
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.41
风险等级：	5.21	Is Samacsys：	N
最长访问时间：	45 ns	其他特性：	EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES
JESD-30 代码：	R-CDIP-T28	JESD-609代码：	e0
长度：	35.56 mm	内存密度：	65536 bit
内存集成电路类型：	NON-VOLATILE SRAM	内存宽度：	8
功能数量：	1	端口数量：	1
端子数量：	28	字数：	8192 words
字数代码：	8000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	8KX8	输出特性：	3-STATE
可输出：	YES	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装代码：	DIP	封装等效代码：	DIP28,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT APPLICABLE
电源：	5 V	认证状态：	Not Qualified
筛选级别：	38535Q/M;38534H;883B	座面最大高度：	4.14 mm
最大待机电流：	0.004 A	子类别：	SRAMs
最大压摆率：	0.08 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	CMOS
温度等级：	MILITARY	端子面层：	Tin/Lead (Sn85Pb15)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT APPLICABLE
宽度：	7.62 mm	Base Number Matches：	1

STK12C68-5C45M 数据手册

STK12C68

Figure 2 shows the proper connection of capacitors

for automatic store operation. A charge storage

capacitor having a capacity of between 68µF and

220µF (± 20%) rated at 6V should be provided.

SOFTWARE NONVOLATILE RECALL

A software RECALL cycle is initiated with a sequence

of READ operations in a manner similar to the soft-

ware STORE initiation. To initiate the RECALL cycle,

the following sequence of E controlled READ opera-

tions must be performed:

In system power mode (Figure 3), both V_CCXand

V_CAPare connected to the + 5V power supply without

the 68µF capacitor. In this mode the AutoStore™

function of the STK12C68 will operate on the stored

system charge as power goes down. The user must,

however, guarantee that V_CCXdoes not drop below

3.6V during the 10ms STORE cycle.

1. Read address

2. Read address

3. Read address

4. Read address

5. Read address

6. Read address

0000 (hex)

1555 (hex)

0AAA (hex)

1FFF (hex)

10F0 (hex)

0F0E (hex)

Valid READ

Initiate RECALL cycle

If an automatic STORE on power loss is not required,

then V_CCXcan be tied to ground and + 5V applied to

V_CAP(Figure 4). This is the AutoStore™ Inhibit

mode, in which the AutoStore™ function is disabled.

If the STK12C68 is operated in this configuration,

references to V_CCXshould be changed to V_CAP

throughout this data sheet. In this mode, STORE

operations may be triggered through software con-

trol or the HSB pin. It is not permissable to change

between these three options “on the fly”.

Internally, RECALL is a two-step procedure. First, the

SRAM data is cleared, and second, the nonvolatile

information is transferred into the SRAM cells. After

the t_RECALLcycle time the SRAM will once again be

ready for READ and WRITE operations. The RECALL

operation in no way alters the data in the Nonvolatile

Elements. The nonvolatile data can be recalled an

unlimited number of times.

AutoStore™ OPERATION

In order to prevent unneeded STORE operations,

automatic STOREs as well as those initiated by

externally driving HSB low will be ignored unless at

least one WRITE operation has taken place since the

most recent STORE or RECALL cycle. Software-

initiated STORE cycles are performed regardless of

whether a WRITE operation has taken place. An

optional pull-up resistor is shown connected to HSB.

This can be used to signal the system that the

AutoStore™ cycle is in progress.

The STK12C68 can be powered in one of three

modes.

During normal AutoStore™ operation, the

STK12C68 will draw current from V_CCXto charge a

capacitor connected to the V_CAPpin. This stored

charge will be used by the chip to perform a single

STORE operation. After power up, when the voltage

on the V_CAPpin drops below V_SWITCH, the part will

automatically disconnect the V_CAPpin from V_CCXand

initiate a STORE operation.

Figure 2: AutoStore™ Mode

Figure 3: System Power Mode

Figure 4: AutoStore™

Inhibit Mode

*If HSB is not used, it should be left unconnected.

October 2003

Document Control # ML0008 rev 0.4

1...6 7 8910 11 12 13

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与STK12C68-5C45M相关器件

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STK12C68-5C55	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5C55I	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5C55M	CYPRESS	64 Kbit (8K x 8) AutoStore nvSRAM	获取价格
STK12C68-5CF25	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5CF25I	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格
STK12C68-5CF25M	ETC	8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS No	获取价格

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