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STK11C48-P45I PDF预览

STK11C48-P45I

更新时间: 2024-11-07 20:14:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 340K
描述
2KX8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28

STK11C48-P45I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP28,.3
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.32最长访问时间:45 ns
其他特性:STORE/RECAL EEPROM SOFTWAREJESD-30 代码:R-PDIP-T28
JESD-609代码:e0长度:34.67 mm
内存密度:16384 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified座面最大高度:4.57 mm
最大待机电流:0.001 A子类别:SRAMs
最大压摆率:0.075 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

STK11C48-P45I 数据手册

 浏览型号STK11C48-P45I的Datasheet PDF文件第2页浏览型号STK11C48-P45I的Datasheet PDF文件第3页浏览型号STK11C48-P45I的Datasheet PDF文件第4页浏览型号STK11C48-P45I的Datasheet PDF文件第5页浏览型号STK11C48-P45I的Datasheet PDF文件第6页浏览型号STK11C48-P45I的Datasheet PDF文件第7页 
STK11C48  
2K x 8 nvSRAM  
QuantumTrap™ CMOS  
Nonvolatile Static RAM  
Obsolete - Not Recommend for new Designs  
FEATURES  
DESCRIPTION  
• 25ns, 35ns and 45ns Access Times  
The Simtek STK11C48 is a fast static RAM with a  
nonvolatile element incorporated in each static  
memory cell. The SRAM can be read and written an  
unlimited number of times, while independent, non-  
volatile data resides in the Nonvolatile Elements.  
Data transfers from the SRAM to the Nonvolatile Ele-  
ments (the STORE operation), or from Nonvolatile  
Elements to SRAM (the RECALL operation), take  
place using a software sequence. Transfers from the  
Nonvolatile Elements to the SRAM (the RECALL  
operation) also take place automatically on restora-  
tion of power.  
STORE to Nonvolatile Elements Initiated by  
Software  
RECALL to SRAM Initiated by Software or  
Power Restore  
• 10mA Typical ICC at 200ns Cycle Time  
• Unlimited READ, WRITE and RECALL Cycles  
• 1,000,000 STORE Cycles to Nonvolatile Ele-  
ments  
• 100-Year Data Retention in Nonvolatile Ele-  
ments  
• Commercial and Industrial Temperatures  
• 28-Pin 300 mil PDIP, 300 mil SOIC and  
350 mil SOIC Packages  
BLOCK DIAGRAM  
PIN CONFIGURATIONS  
1
NC  
NC  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
CC  
W
NC  
Quantum Trap  
32 x 512  
2
3
A
A
7
4
A
6
5
4
3
8
A5  
5
A
A
A
A
A
9
NC  
G
STORE  
STORE/  
RECALL  
CONTROL  
6
A6  
A7  
A8  
A9  
7
STATIC RAM  
ARRAY  
8
RECALL  
A
2
10  
9
A
E
1
0
32 x 512  
10  
11  
12  
13  
14  
A
DQ  
DQ  
7
6
5
DQ  
0
28 - 300 PDIP  
28 - 300 SOIC  
28 - 350 SOIC  
DQ  
DQ  
1
2
DQ  
DQ  
DQ  
4
3
SOFTWARE  
DETECT  
A0 - A10  
V
SS  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
COLUMN I/O  
PIN NAMES  
COLUMN DEC  
A
- A  
Address Inputs  
Write Enable  
Data In/Out  
Chip Enable  
Output Enable  
Power (+ 5V)  
Ground  
0
10  
W
A0 A1 A2 A3 A4 A10  
DQ - DQ  
0
G
7
E
E
G
W
V
V
CC  
SS  
March 2006  
1
Document Control # ML0003 rev 0.2  

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