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STF18N55M5 PDF预览

STF18N55M5

更新时间: 2024-11-16 12:04:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
22页 1253K
描述
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220

STF18N55M5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.8其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):200 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:550 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.24 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):52 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STF18N55M5 数据手册

 浏览型号STF18N55M5的Datasheet PDF文件第2页浏览型号STF18N55M5的Datasheet PDF文件第3页浏览型号STF18N55M5的Datasheet PDF文件第4页浏览型号STF18N55M5的Datasheet PDF文件第5页浏览型号STF18N55M5的Datasheet PDF文件第6页浏览型号STF18N55M5的Datasheet PDF文件第7页 
STB18N55M5, STD18N55M5  
STF18N55M5, STP18N55M5  
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET  
in D²PAK, DPAK, TO-220FP and TO-220  
Features  
VDSS  
@TJmax  
RDS(on)  
max  
Order codes  
ID  
3
1
3
1
STB18N55M5  
STD18N55M5  
STF18N55M5  
STP18N55M5  
DPAK  
PAK  
550 V  
< 0.24 Ω  
13 A  
DPAK worldwide best R  
DS(on)  
3
3
Higher V  
rating  
DSS  
2
2
1
1
High dv/dt capability  
TO-220FP  
TO-220  
Excellent switching performance  
Easy to drive  
100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Application  
$ꢅꢆꢇ  
Switching applications  
Description  
'ꢅꢁꢇ  
The devices are N-channel MDmesh™ V Power  
MOSFET based on an innovative proprietary  
vertical process technology, which is combined  
with STMicroelectronics’ well-known  
3ꢅꢈꢇ  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB18N55M5  
STD18N55M  
STF18N55M5  
STP18N55M5  
Tape and reel  
Tube  
DPAK  
TO-220FP  
TO-220  
18N55M5  
March 2011  
Doc ID 17078 Rev 2  
1/22  
www.st.com  
22  

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