Datasheet > STC9014

STC9014

更新时间： 2024-11-18 06:14:35

品牌	Logo	应用领域
SUNTAC		晶体晶体管
页数	文件大小	规格书
2页	65K
描述
NPN Silicon Transistor

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中文翻译

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数据手册

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STC9014 数据手册

STC9014

NPN Silicon Transistor

Audio Frequency Amplifier & High

Frequency OSC.

• Complement to STC9015

• Collector-Base Voltage : V

=60V

CBO

• High Current Gain Bandwidth Product : f =300MHz (TYP)

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25}°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

150

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

250

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25}°C unless otherwise noted

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I =100µA, I =0

CBO

CEO

EBO

I =10mA, I =0

C B

I =10µA, I =0

=40V, I =0

0.1

700

0.3

µA

CBO

EBO

=3V, I =0

DC Current Gain

=6V, I =1.0mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =100mA, I =10mA

0.15

300

2.5

MHz

=6V, I =10mA

=6V, I =0, f=1MHz

Noise Figure

=6V, I =0.5mA

4.0

f=1KHz, R =500Ω

Classification

40 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

1/2

中文翻译

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