Datasheet > STC9015

STC9015

更新时间： 2022-12-20 03:03:07

品牌	Logo	应用领域
SUNTAC		晶体晶体管
页数	文件大小	规格书
2页	66K
描述
PNP Silicon Transistor

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数据手册

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STC9015 数据手册

STC9015

PNP Silicon Transistor

Low Frequency Amplifier

= -60V

• Collector-Base Voltage : V

CBO

• Complement to STC9014

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25}°C unless otherwise noted

Symbol

Parameter

Ratings

-60

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-50

CEO

EBO

-5

-150

250

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25}°C unless otherwise noted

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

-60

-50

- 5

Typ.

Max.

Units

I = -100µA, I =0

CBO

CEO

EBO

I = -10mA. I =0

C B

I = -10µA. I =0

= --60V, I =0

-100

700

CBO

EBO

= -5V, I =0

DC Current Gain

= -6V, I = -1mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -100mA, I = -10mA

-0.18

-0.62

180

2.8

-0.3

= -6V, I = -1mA

-0.50

-0.80

= -6V, I = -10mA

MHz

= -10V, I = 0, f=1MHz

Noise Figure

= -6V, I = -0.3mA

6.0

f=1MHz, Rs=10kΩ

Classification

40 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

1/2

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