Datasheet > STB24NF10_06

STB24NF10_06

更新时间： 2024-11-02 03:02:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极
页数	文件大小	规格书
14页	422K
描述
N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

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STB24NF10_06 数据手册

STB24NF10

STP24NF10

N-channel 100V - 0.0055Ω - 26A - TO-220 - D²PAK

Low gate charge STripFET™ II Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STB24NF10

STP24NF10

100V

<0.060Ω

26A

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Application oriented characterization

TO-220

D²PAK

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET™ process

has specifically been designed to minimize the

on-resistance. It is therefore suitable as primary

switch in advanced high-efficiency,high-frequency

isolated DC-DC converters for Telecom and

Computer application. It is also intended for any

applications with low gate drive requirements.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STP24NF10

STB24NF10

P24NF10

B24NF10

TO-220

D²PAK

Tube

Tape & reel

August 2006

Rev 7

1/14

www.st.com

12 3 4 5 6 7...14

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