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STA3350Q PDF预览

STA3350Q

更新时间: 2024-10-28 09:01:35
品牌 Logo 应用领域
可天士 - KODENSHI 晶体晶体管
页数 文件大小 规格书
6页 399K
描述
PNP Silicon Transistor

STA3350Q 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknown风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:50 V配置:Single
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:1.1 W最大功率耗散 (Abs):1.5 W
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.35 V
Base Number Matches:1

STA3350Q 数据手册

 浏览型号STA3350Q的Datasheet PDF文件第2页浏览型号STA3350Q的Datasheet PDF文件第3页浏览型号STA3350Q的Datasheet PDF文件第4页浏览型号STA3350Q的Datasheet PDF文件第5页浏览型号STA3350Q的Datasheet PDF文件第6页 
STA3350Q  
PNP Silicon Transistor  
Applications  
Power amplifier application  
PIN Connection  
High current switching application  
Features  
Low saturation voltage:  
VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA  
Large collector current capacity: IC=-3A  
Small and compact SMD type package  
“Green” device and RoHS compliant device  
Available in full lead (Pb)-free device  
SOT-223  
Ordering Information  
Type NO.  
Marking  
Package Code  
STA3350  
YWW  
STA3350Q  
SOT-223  
STA3350: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)  
Absolute Maximum Ratings  
[Ta=25]  
Unit  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-50  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
-50  
V
-6  
V
A(DC)  
A(Pulse)  
W
-3  
Collector current  
ICP*  
PC  
-6  
1.1  
Collector Power dissipation  
**  
1.5  
W
PC  
Junction temperature  
TJ  
150  
-55~150  
°C  
Storage temperature range  
Tstg  
°C  
* : Single pulse, tp= 300  
** : When mounted on copper substrate(250 ×0.8t)  
Characteristic  
Symbol  
Typ.  
Max  
113.6  
83.3**  
Unit  
/W  
/W  
-
-
Thermal resistance  
Junction-ambient  
Rth(J-a)  
KSD-T5A008-000  
1

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