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ST93CS56M3 PDF预览

ST93CS56M3

更新时间: 2024-11-09 20:33:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
16页 122K
描述
128X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

ST93CS56M3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.9Is Samacsys:N
其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.004 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

ST93CS56M3 数据手册

 浏览型号ST93CS56M3的Datasheet PDF文件第2页浏览型号ST93CS56M3的Datasheet PDF文件第3页浏览型号ST93CS56M3的Datasheet PDF文件第4页浏览型号ST93CS56M3的Datasheet PDF文件第5页浏览型号ST93CS56M3的Datasheet PDF文件第6页浏览型号ST93CS56M3的Datasheet PDF文件第7页 
ST93CS56  
ST93CS57  
2K (128 x 16) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SINGLE SUPPLY VOLTAGE  
8
8
– 3V to 5.5V for the ST93CS56  
– 2.5V to 5.5V for the ST93CS57  
USER DEFINED WRITE PROTECTED AREA  
PAGE WRITE MODE (4 WORDS)  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
1
1
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
ST93CS56 and ST93CS57 are replaced by  
the M93S56  
Figure 1. Logic Diagram  
DESCRIPTION  
The ST93CS56 and ST93CS57 are 2K bit Electri-  
cally Erasable Programmable Memory (EEPROM)  
fabricatedwith SGS-THOMSON’s High Endurance  
Single Polysilicon CMOS technology. The memory  
is accessed through a serial input D and output Q.  
V
CC  
The 2K bit memory is organized as 128 x 16 bit  
words.Thememory is accessedby a set of instruc-  
tions which include Read, Write, Page Write, Write  
All and instructions used to set the memory protec-  
tion. A Read instruction loads the address of the  
first word to be read into an internal address  
pointer.  
D
C
Q
ST93CS56  
ST93CS57  
S
PRE  
W
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
Q
V
SS  
C
AI00896B  
PRE  
W
Protect Enable  
Write Enable  
VCC  
VSS  
Supply Voltage  
Ground  
June 1997  
1/16  
This is information on a product still in production but not recommended for new designs.  

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