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ST5771

更新时间: 2024-11-29 22:42:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管
页数 文件大小 规格书
2页 30K
描述
PNP Switching Transistor

ST5771 数据手册

 浏览型号ST5771的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
ST5771-1  
TO-92  
C
B
E
PNP Switching Transistor  
This device is designed for high speed saturated switching  
applications at currents to 100mA. Sourced from Process 65.  
See PN4258 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
15  
15  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
4.5  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
ST5771-1  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
357  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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