Datasheet > ST47P06D

ST47P06D

更新时间： 2024-11-10 17:15:35

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
8页	696K
描述
TO-220

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ST47P06D 数据手册

ST47P06D

P Channel Enhancement Mode MOSFET

ꢀ47.0A

DESCRIPTION

ST47P06D is the PꢀChannel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize onꢀstate resistance.

These device is particularly suited for low voltage application, notebook computer

power management and other battery circuits where highꢀside switching.

PIN CONFIGURATION

FEATURE

ꢀ

ꢀ60V/ꢀ24A, R_DS(ON)= 22mꢁ (Typ.)

@VGS = ꢀ10V

ꢀ60V/ꢀ10A, R_DS(ON)= 30mꢁ

@VGS = ꢀ4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and

maximum DC current capability

TOꢀ220 package design

ꢀ

ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )

Symb

Parameter

DrainꢀSource Voltage

Typical

Unit

VDSS

ꢀ60

GateꢀSource Voltage

VGSS

±20

Continuous Drain Current

TA=25ꢀ

ꢀ47.0

ꢀ33.0

ꢀ

(TJ=150 )

ꢀ

TA=80

Pulsed Drain Current

IDM

ꢀ180

160

Power Dissipation

TA=25ꢀ

ꢀ

Operation Junction Temperature

Storgae Temperature Range

ꢀ55/150

TSTG

Thermal ResistanceꢀJunction to Ambient

RθJA

ꢀ

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST47P06D 2010. V1

12 3 4 5 6 7 8

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