是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | DISK BUTTON, O-CEDB-N2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.30.00.80 |
风险等级: | 5.16 | 标称电路换相断开时间: | 500 µs |
最大直流栅极触发电流: | 400 mA | 最大直流栅极触发电压: | 4 V |
JESD-30 代码: | O-CEDB-N2 | JESD-609代码: | e0 |
最大漏电流: | 250 mA | 通态非重复峰值电流: | 61000 A |
端子数量: | 2 | 最大通态电流: | 2800000 A |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 断态重复峰值电压: | 1000 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST3230C10R1PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2 | |
ST3230C10R2 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST3230C10R2LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2 | |
ST3230C10R3 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 2800000mA I(T), 1000V V(DRM), RPUK-2 | |
ST3230C10R3L | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST3230C10R3LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2 | |
ST3230C10R3PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2 | |
ST3230C12R0 | ETC |
获取价格 |
1200V 2785A Phase Control SCR in a A-36 (R-Puk) package | |
ST3230C12R0L | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 | |
ST3230C12R0LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 5970A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, RPUK-2 |