Datasheet > ST203C12CCH1L

ST203C12CCH1L

更新时间： 2024-12-02 09:31:43

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
9页	174K
描述
Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST203C12CCH1L 数据手册

Bulletin I25176 rev. B 04/00

ST203C..C SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

370A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST203C..C

Units

370

°C

@ T

I_T(RMS)

700

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

5260

5510

138

126

I²t

KA²s

V_DRM/V_RRM

1000 to 1200

20 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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与ST203C12CCH1L相关器件

型号	品牌	获取价格	描述	数据表
ST203C12CCH1LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A
ST203C12CCH1L-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR
ST203C12CCH1P	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST203C12CCH1-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR
ST203C12CCH2L	VISHAY	获取价格	Silicon Controlled Rectifier, 370000mA I(T), 1200V V(DRM)
ST203C12CCH2LP	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST203C12CCH2P	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST203C12CCH2-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR
ST203C12CCH3	VISHAY	获取价格	Silicon Controlled Rectifier, 370000mA I(T), 1200V V(DRM)
ST203C12CCH3P	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E