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ST173C10CFK0PBF PDF预览

ST173C10CFK0PBF

更新时间: 2024-11-23 21:17:03
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
11页 184K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

ST173C10CFK0PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BUTTON
包装说明:DISK BUTTON, O-CEDB-N2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.02其他特性:HIGH SPEED
外壳连接:ISOLATED配置:SINGLE
最大直流栅极触发电流:200 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:610 A断态重复峰值电压:1000 V
重复峰值反向电压:1000 V表面贴装:YES
端子形式:NO LEAD端子位置:END
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

ST173C10CFK0PBF 数据手册

 浏览型号ST173C10CFK0PBF的Datasheet PDF文件第2页浏览型号ST173C10CFK0PBF的Datasheet PDF文件第3页浏览型号ST173C10CFK0PBF的Datasheet PDF文件第4页浏览型号ST173C10CFK0PBF的Datasheet PDF文件第5页浏览型号ST173C10CFK0PBF的Datasheet PDF文件第6页浏览型号ST173C10CFK0PBF的Datasheet PDF文件第7页 
ST173SPbF Series  
Vishay High Power Products  
Inverter Grade Thyristors  
(Stud Version), 175 A  
FEATURES  
• All diffused design  
• Center amplifying gate  
• Guaranteed high dV/dt  
• Guaranteed high dI/dt  
• High surge current capability  
• Low thermal impedance  
• High speed performance  
• Compression bonding  
• Lead (Pb)-free  
RoHS  
COMPLIANT  
TO-209AB (TO-93)  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
TYPICAL APPLICATIONS  
• Inverters  
IT(AV)  
175 A  
• Choppers  
• Induction heating  
• All types of force-commutated converters  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
175  
UNITS  
A
IT(AV)  
TC  
85  
°C  
IT(RMS)  
275  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
4680  
A
ITSM  
4900  
110  
I2t  
kA2s  
100  
V
DRM/VRRM  
1000 to 1200  
15 to 25  
- 40 to 125  
V
tq  
Range  
µs  
°C  
TJ  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
DRM/VRRM, MAXIMUM  
V
RSM, MAXIMUM  
IDRM/IRRM MAXIMUM  
VOLTAGE  
CODE  
TYPE NUMBER  
REPETITIVE PEAK VOLTAGE  
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM  
V
mA  
10  
12  
1000  
1200  
1100  
1300  
ST173S  
40  
Document Number: 94367  
Revision: 29-Apr-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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