Datasheet > ST173C10CFK1PBF

ST173C10CFK1PBF

更新时间： 2024-11-24 07:56:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
9页	175K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST173C10CFK1PBF 数据手册

Bulletin I25180 rev. B 04/00

ST173C..C SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

330A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173C..C

330

Units

@ T

°C

I_T(RMS)

610

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4680

4900

110

I²t

KA²s

100

V_DRM/V_RRM

1000 to1200

15 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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ST173C10CFK2	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CFK2L	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
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ST173C10CFK2P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CFK2PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A
ST173C10CFK3	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CFK3L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
ST173C10CFK3LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C10CFK3LPBF	INFINEON	获取价格	暂无描述