Datasheet > ST1702

ST1702

更新时间： 2024-11-22 06:14:27

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商升特 - SEMTECH		晶体晶体管
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描述
NPN Silicon Epitaxial Planar Transistor

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ST1702 数据手册

ST 1702

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications

The transistor is subdivided into five groups, L, M,

N, O and P, according to its DC current gain.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Current

600

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_amb= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

h_FE

132

170

213

263

333

189

233

300

370

476

at V_CE= 1 V, I_C= 100 mA Current Gain Group

Collector Base Breakdown Voltage

at I_C= 10 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector Emitter Breakdown Voltage

at I_C= 10 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Cutoff Current

at V_CB= 20 V

Emitter Cutoff Current

at V_EB= 5 V

Collector Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Gain Bandwidth Product

at V_CE= 5 V, I_C= 10 mA

Output Capacitance

0.1

0.5

0.7

µA

I_EBO

V_CE(sat)

f_T

100

MHz

C_OB

at V_CB= 5 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 27/06/2006

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