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ST173C04CFP0 PDF预览

ST173C04CFP0

更新时间: 2024-01-15 15:33:21
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
1页 52K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

ST173C04CFP0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75标称电路换相断开时间:18 µs
配置:SINGLE最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 VJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:125 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大均方根通态电流:610 A断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:30
触发设备类型:SCRBase Number Matches:1

ST173C04CFP0 数据手册

  

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ST173C04CFP0PBF INFINEON

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Silicon Controlled Rectifier, 610A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
ST173C06CFP0PBF INFINEON

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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
ST173C06CFP1 INFINEON

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Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB
ST173C08CFH0 INFINEON

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Silicon Controlled Rectifier, 610A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB
ST173C08CFH0PBF INFINEON

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Silicon Controlled Rectifier, 610A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB