是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | compliant | HTS代码: | 8541.30.00.80 |
风险等级: | 5.75 | 标称电路换相断开时间: | 18 µs |
配置: | SINGLE | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | JEDEC-95代码: | TO-200AB |
JESD-30 代码: | O-CEDB-N2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 125 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | 250 | 认证状态: | Not Qualified |
最大均方根通态电流: | 610 A | 断态重复峰值电压: | 400 V |
重复峰值反向电压: | 400 V | 表面贴装: | YES |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | NO LEAD |
端子位置: | END | 处于峰值回流温度下的最长时间: | 30 |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST173C04CFP0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB | |
ST173C06CFH0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFH0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFH1 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFH1PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFK1 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFP0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C06CFP1 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB | |
ST173C08CFH0 | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB | |
ST173C08CFH0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB |