Datasheet > ST1000B82V

ST1000B82V

更新时间： 2024-11-07 17:16:47

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	108K
描述
1000 W, 82 V Transient Voltage Suppressors

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数据手册

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ST1000B82V 数据手册

Solid State Devices, Inc.

ST1000 Series

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

FEATURES:

1000 W



Hermetically Sealed in Glass

High Peak Transient Power 1000 W

Can Be Used as a 5 W Zener

Transient Voltage Suppressor

7.5 – 510 VOLTS

Available in Axial, Surface Mount, and Ministud

Configurations

TX, TXV, and Space Level Screening Available^2/

Axial



Higher Voltages Available (consult factory)

Part Number / Ordering Information ^1/

ST1000 A 9.1 SMS TX

│

└

Screening ^2/

DIM

MIN

––

0.047”

1.0”

MAX

0.158”

0.185”

0.053”

––

__= Not Screened

TX = TX Level

TXV = TXV Level

= S Level

│

└

│

└

Package: ^3/

__ = Axial

SMS

SMS = Square Tab

V = Isolated Ministud

C = Ministud

Voltage: example

9.1 = 9.1V

Tolerance A =  10%

B =  5 %

DIM

MIN

MAX

0.180”

0.225”

0.027”

––

0.170"

0.200”

0.018”

0.001”

Maximum Ratings

Symb l Value Unit

Peak pulse power dissipation

P_PPM

1000

500

100 µs Square Wave (see Fig 2)

Isolated Ministud

Peak pulse power dissipation ^5/

10/1000 µs waveform (see Fig 1 & 2)

Steady State Power Dissipation

Axial Lead : T_L=25ºC, L=3/8"

SMS & Ministud: T_Cor T_E= 75 ºC

P_D

6.0

-65 to

+175

Operating and Storage Temp.

T_op& T_stg

V_F

ºC

Maximum Forward Voltage Drop

I_F= 6.0 Apk, T_A= 25 ºC, pulsed

1.3

Ministud

Thermal Resistance,

Junction to Lead L=3/8”

R_θJL

ºC/W

Thermal Resistance,

Junction to End Cap

Junction to Case

R_θJE

R_θJC

ºC/W

NOTES:

1/ For ordering information, price, and availability – contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request. X-Ray shall be performed in lieu of Precap Inspection – Consult factory.

3/ Consult factory for package outlines.

4/ All voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test time will have a corresponding effect on the

measured value due to heating effects.

5/ Exponential waveform i.a.w. IEC60-1 10/1000 uS pulse

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: T00033D

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与ST1000B82V相关器件

型号	品牌	获取价格	描述	数据表
ST1000B82VTX	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 68V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000B82VTXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 68V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000B9.1	SSDI	获取价格	1000 W, 9.1 V Transient Voltage Suppressors
ST1000B9.1C	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1CS	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1CTX	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1CTXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1SMS	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1SMSTX	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B9.1SMSTXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, HE

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