Datasheet > ST1000A180VTXV

ST1000A180VTXV

更新时间： 2024-11-07 06:20:03

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	108K
描述
Trans Voltage Suppressor Diode, 1000W, 160V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, ISOLATED MINISTUD-1

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ST1000A180VTXV 数据手册

Solid State Devices, Inc.

ST1000 Series

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

FEATURES:

1000 W



Hermetically Sealed in Glass

High Peak Transient Power 1000 W

Can Be Used as a 5 W Zener

Transient Voltage Suppressor

7.5 – 510 VOLTS

Available in Axial, Surface Mount, and Ministud

Configurations

TX, TXV, and Space Level Screening Available^2/

Axial



Higher Voltages Available (consult factory)

Part Number / Ordering Information ^1/

ST1000 A 9.1 SMS TX

│

└

Screening ^2/

DIM

MIN

––

0.047”

1.0”

MAX

0.158”

0.185”

0.053”

––

__= Not Screened

TX = TX Level

TXV = TXV Level

= S Level

│

└

│

└

Package: ^3/

__ = Axial

SMS

SMS = Square Tab

V = Isolated Ministud

C = Ministud

Voltage: example

9.1 = 9.1V

Tolerance A =  10%

B =  5 %

DIM

MIN

MAX

0.180”

0.225”

0.027”

––

0.170"

0.200”

0.018”

0.001”

Maximum Ratings

Symb l Value Unit

Peak pulse power dissipation

P_PPM

1000

500

100 µs Square Wave (see Fig 2)

Isolated Ministud

Peak pulse power dissipation ^5/

10/1000 µs waveform (see Fig 1 & 2)

Steady State Power Dissipation

Axial Lead : T_L=25ºC, L=3/8"

SMS & Ministud: T_Cor T_E= 75 ºC

P_D

6.0

-65 to

+175

Operating and Storage Temp.

T_op& T_stg

V_F

ºC

Maximum Forward Voltage Drop

I_F= 6.0 Apk, T_A= 25 ºC, pulsed

1.3

Ministud

Thermal Resistance,

Junction to Lead L=3/8”

R_θJL

ºC/W

Thermal Resistance,

Junction to End Cap

Junction to Case

R_θJE

R_θJC

ºC/W

NOTES:

1/ For ordering information, price, and availability – contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request. X-Ray shall be performed in lieu of Precap Inspection – Consult factory.

3/ Consult factory for package outlines.

4/ All voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test time will have a corresponding effect on the

measured value due to heating effects.

5/ Exponential waveform i.a.w. IEC60-1 10/1000 uS pulse

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: T00033D

DOC

中文翻译

下载PDF

与ST1000A180VTXV相关器件

型号	品牌	获取价格	描述	数据表
ST1000A18C	SSDI	获取价格	1000 W, 18 V Transient Voltage Suppressors
ST1000A18S	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000A18SMS	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000A18SMSTX	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 15V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000A18V	SSDI	获取价格	1000 W, 18 V Transient Voltage Suppressors
ST1000A20	SSDI	获取价格	1000 W, 20 V Transient Voltage Suppressors
ST1000A200	SSDI	获取价格	1000 W, 200 V Transient Voltage Suppressors
ST1000A200C	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000A200SMS	SSDI	获取价格	1000 W, 200 V Transient Voltage Suppressors
ST1000A200V	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 170V V(RWM), Unidirectional, 1 Element, Silicon, HE

与ST1000A180VTXV相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

ST1000A180VTXV

ST1000A180VTXV 数据手册

与ST1000A180VTXV相关器件

与ST1000A180VTXV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ST1000A180VTXV

ST1000A180VTXV 数据手册

与ST1000A180VTXV相关器件

与ST1000A180VTXV相关文章

您还可以找

您在本页遇到什么问题？