Datasheet > ST-1MLAR2_09

ST-1MLAR2_09

更新时间： 2024-01-26 11:31:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	185K
描述
Photo transistors

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中文翻译

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数据手册

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ST-1MLAR2_09 数据手册

Photo transistors

KODENSHI KOREA CORP

ST-1MLAR2. ST-1MLBR2

The ST-1MLAR2 and 1MLBR2 is a high sensitivity

NPN silicon phototransistor mounted in a TO-18

Type header with black epoxy encapsulation.

With daylight filter the phototransistor is sensitive

only to infrared rays.

[Unit : mm]

Dimensions

Features

ㆍWide angular response

ㆍRelatively low-cost against metal can package

ㆍLow profile package

②

①

ㆍWith daylight filter

③

Applications

ㆍRemote control sensors

ㆍCard readers

ㆍOptical switches

[T_A= 25℃]

Absolute Maximum Ratings

Parameter

Symbol

V_CEO

V_ECO

I_C

Rating

Unit

C-E Voltage

E-C Voltage

℃

Collector current

Collector power dissipation

Operating temp

P_C

100

Topr.

Tstg.

Tsol

-25~+90

-30~+100

260

℃

Storage temp

Soldering temp ^*1

℃

*1. For MAX.5 seconds at the position of 2mm from the package

[T_A= 25℃]

Electro-Optical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

200

5.0

0.4

Unit.

I_CEO

I_L

V_CEO=10V

Collector dark current

V_CE=10V, 200lx^*2

I_C=2mA, 2,000lx^*2

Light current

0.5

1.2

V_CE(sat)

C-E saturation voltage

0.2

Rise time

Fall time

μsec

_CC=10V, I_C=5mA

Switching speeds

R_L=100Ω

720 ~ 1,050

940

Spectral sensitivity

Peak wavelength

Half Angle

λp

ΔΘ

±70

degrees

*2. Color temp = 2856K standard tungsten lamp

- 1 -

中文翻译

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