Datasheet > ST1N60

ST1N60

更新时间： 2024-11-23 06:14:27

品牌	Logo	应用领域
SUNTAC		/
页数	文件大小	规格书
4页	114K
描述
POWER MOSFET

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ST1N60 数据手册

ST1N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

'ꢀ Robust High Voltage Termination

'ꢀ Avalanche Energy Specified

'ꢀ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

'ꢀ Diode is Characterized for Use in Bridge Circuits

'ꢀ I_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-251

Front View

TO-252

Front View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

Symbol

I_D

Value

1.0

Unit

ꢀ Pulsed

I_DM

9.0

Gate-to-Source Voltage ꢀ Continue

ꢀ Non-repetitive

V_GS

V_GSM

P_D

Total Power Dissipation

TO-251/252

-55 to 150

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy ꢀ T_J= 25R

(V_DD= 100V, V_GS= 10V, I_AS= 2A, L = 10mH, R_G= 25ꢀ)

Thermal Resistance ꢀ Junction to Case

ꢀ Junction to Ambient

T_J, T_STG

E_AS

1.0

62.5

260

R/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

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