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SSTVF16859BS,118 PDF预览

SSTVF16859BS,118

更新时间: 2024-11-16 15:52:59
品牌 Logo 应用领域
恩智浦 - NXP 输出元件逻辑集成电路触发器电视
页数 文件大小 规格书
23页 134K
描述
IC SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PQCC56, 8 X 8 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT-684-1, HVQFN-56, FF/Latch

SSTVF16859BS,118 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFN包装说明:HVQCCN,
针数:56Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.16
系列:SSTVJESD-30 代码:S-PQCC-N56
JESD-609代码:e4长度:8 mm
逻辑集成电路类型:D FLIP-FLOP湿度敏感等级:1
位数:13功能数量:1
端子数量:56最高工作温度:70 °C
最低工作温度:输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260传播延迟(tpd):2.5 ns
认证状态:Not Qualified座面最大高度:1 mm
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
温度等级:COMMERCIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
触发器类型:POSITIVE EDGE宽度:8 mm
最小 fmax:210 MHzBase Number Matches:1

SSTVF16859BS,118 数据手册

 浏览型号SSTVF16859BS,118的Datasheet PDF文件第2页浏览型号SSTVF16859BS,118的Datasheet PDF文件第3页浏览型号SSTVF16859BS,118的Datasheet PDF文件第4页浏览型号SSTVF16859BS,118的Datasheet PDF文件第5页浏览型号SSTVF16859BS,118的Datasheet PDF文件第6页浏览型号SSTVF16859BS,118的Datasheet PDF文件第7页 
SSTVF16859  
13-bit 1 : 2 SSTL_2 registered buffer for DDR  
Rev. 02 — 19 July 2005  
Product data sheet  
1. General description  
The SSTVF16859 is a 13-bit to 26-bit SSTL_2 registered driver with differential clock  
inputs, designed to operate between 2.3 V and 2.7 V for PC1600-PC2700 applications or  
between 2.5 V and 2.7 V for PC3200 applications. All inputs are compatible with the  
JEDEC standard for SSTL_2 with Vref normally at 0.5 × VDD, except the LVCMOS reset  
(RESET) input. All outputs are SSTL_2, Class II compatible, which can be used for  
standard stub-series applications or capacitive loads. Master reset (RESET)  
asynchronously resets all registers to zero.  
The SSTVF16859 is intended to be incorporated into standard DIMM (Dual In-Line  
Memory Module) designs defined by JEDEC, such as DDR (Double Data Rate) SDRAM  
and SDRAM II Memory Modules. Different from traditional SDRAM, DDR SDRAM  
transfers data on both clock edges (rising and falling), thus doubling the peak bus  
bandwidth. A DDR DRAM rated at 133 MHz will have a burst rate of 266 MHz.  
The device data inputs consist of different receivers. One differential input is tied to the  
input pin while the other is tied to a reference input pad, which is shared by all inputs.  
The clock input is fully differential (CK and CK) to be compatible with DRAM devices that  
are installed on the DIMM. Data are registered at the crossing of CK going HIGH, and CK  
going LOW. However, since the control inputs to the SDRAM change at only half the data  
rate, the device must only change state on the positive transition of the CK signal. In order  
to be able to provide defined outputs from the device even before a stable clock has been  
supplied, the device has an asynchronous input pin (RESET), which when held to the  
LOW state, resets all registers and all outputs to the LOW state.  
The device supports low-power standby operation. When RESET is LOW, the differential  
input receivers are disabled, and un-driven (floating) data, clock, and reference voltage  
(VREF) inputs are allowed. In addition, when RESET is LOW, all registers are reset, and  
all outputs are forced LOW. The LVCMOS RESET input must always be held at a valid  
logic HIGH or LOW level.  
To ensure defined outputs from the register before a stable clock has been supplied,  
RESET must be held in the LOW state during power-up.  
In the DDR DIMM application, RESET is specified to be completely asynchronous with  
respect to CK and CK. Therefore, no timing relationship can be guaranteed between the  
two. When entering RESET, the register will be cleared and the outputs will be driven  
LOW. As long as the data inputs are LOW, and the clock is stable during the time from the  
LOW-to-HIGH transition of RESET until the input receivers are fully enabled, the outputs  
will remain LOW.  
 

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