Datasheet > SSU04N65

SSU04N65

更新时间： 2024-01-10 09:43:17

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SECOS		/
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描述
N-Ch Enhancement Mode Power MOSFET

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SSU04N65 数据手册

SSU04N65

4A , 650V , R_DS(ON)2.6Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

TO-263

DESCRIPTION

The SSU04N65 is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .





FEATURES





Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available



Drain

MARKING

4N65

Millimeter

Date Code

REF.







Gate

Min.

4.00

0.68

0.00

0.36

Max.

4.85

1.00

0.30

0.53

Min.

Max.

L

1.10

1.45

1.34 REF

8.0

9.15

2.54 REF

PACKAGE INFORMATION

1.50 REF

14.6

15.85

2.29

9.60

2.79

10.45

1.27 REF



Source

Package

MPQ

Leader Size

TO-263

0.8K

13 inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

650

V_GS

±30

2.6

T_C=25°C

Continuous Drain Current @V_GS=10V ¹

Pulsed Drain Current ²

I_D

T_C=100°C

I_DM

P_D

T_C=25°C

T_A=25°C

112

Total Power Dissipation ⁴

Single Pulse Avalanche Energy ³

Single Pulse Avalanche Current

E_AS

I_AS

2.36

Operating Junction and Storage Temperature Range

T_J, T_STG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient (PCB

R_θJA

R_θJC

°C / W

mount)¹

Maximum Thermal Resistance Junction-Case ¹

1.12

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Jun-2013 Rev. B

Page 1 of 4

12 3 4

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