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SST39VF200A-70-4I-M1Q

更新时间： 2024-12-01 03:44:07
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31页 845K
描述
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

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SST39VF200A-70-4I-M1Q 数据手册

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 128K x16 / 256K x16 / 512K x16  
Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF200A/400A/800A  
– 2.7-3.6V for SST39VF200A/400A/800A  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
(typical values at 14 MHz)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
•
Fast Erase and Word-Program  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
•
•
2 seconds (typical) for SST39LF/VF200A  
4 seconds (typical) for SST39LF/VF400A  
8 seconds (typical) for SST39LF/VF800A  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
•
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Uniform 32 KWord blocks  
Fast Read Access Time  
– 45 and 55 ns for SST39LF200A  
– 55 ns for SST39LF400A/800A  
– 70 ns for SST39VF200A/400A/800A  
– Toggle Bit  
– Data# Polling  
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm)  
•
•
•
•
Latched Address and Data  
– 48-bump XFLGA (4mm x 6mm) for 4M and 8M  
•
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are 128K x16 / 256K x16 / 512K x16 CMOS  
Multi-Purpose Flash (MPF) manufactured with SST propri-  
etary, high-performance CMOS SuperFlash technology.  
The split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST39LF200A/400A/800A  
write (Program or Erase) with a 3.0-3.6V power supply.  
The SST39VF200A/400A/800A write (Program or Erase)  
with a 2.7-3.6V power supply. These devices conform to  
JEDEC standard pinouts for x16 memories.  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are suited for applications that require con-  
venient and economical updating of program, configura-  
tion, or data memory. For all system applications, they  
significantly improve performance and reliability, while low-  
ering power consumption. They inherently use less energy  
during Erase and Program than alternative flash technolo-  
gies. When programming a flash device, the total energy  
consumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed dur-  
ing any Erase or Program operation is less than alternative  
flash technologies. These devices also improve flexibility  
while lowering the cost for program, data, and configura-  
tion storage applications.  
Featuring  
high-performance  
Word-Program,  
the  
SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices provide a typical Word-Program time of 14  
µsec. The devices use Toggle Bit or Data# Polling to detect  
the completion of the Program or Erase operation. To pro-  
tect against inadvertent write, they have on-chip hardware  
and software data protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed typical endur-  
ance of 100,000 cycles. Data retention is rated at greater  
than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
©2007 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71117-09-000  
1
2/07  
These specifications are subject to change without notice.  
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与SST39VF200A-70-4I-M1Q相关器件

型号 品牌 获取价格 描述 数据表
SST39VF-200A-704I-M1QE SST

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 		2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF200A-70-4I-M1QE MICROCHIP

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 		128K X 16 FLASH 2.7V PROM, 70 ns, PBGA48, 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207C
SST39VF200A-70-4I-M1QE SST

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 		2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF200A-70-4I-M1QE-T MICROCHIP

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 		IC,EEPROM,NOR FLASH,128KX16,CMOS,BGA,48PIN,PLASTIC
SST39VF200A-90-4C-B2K SILICON

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 		Flash, 128KX16, 90ns, PBGA48
SST39VF200A-90-4C-B3K SST

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 		2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF200A-90-4C-B3KE SILICON

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 		Flash, 128KX16, 90ns, PBGA48, 6 X 8 MM, LEAD FREE, 0.80 MM PITCH, MO-210AB-1, TFBGA-48
SST39VF200A-90-4C-EK SST

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 		2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39VF200A-90-4C-EKE MICROCHIP

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 		128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48
SST39VF200A-90-4C-EKE SILICON

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 		Flash, 128KX16, 90ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48

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