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SST39VF200A-90-4C-EKE

更新时间： 2024-12-01 14:23:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
30页 497K
描述
128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48, 12 X 20 MM, LEAD FREE, MO-142DD, TSOP1-48

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SST39VF200A-90-4C-EKE 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TSOP1
包装说明：TSOP1,针数：48
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.3
Is Samacsys：N最长访问时间：90 ns
JESD-30 代码：R-PDSO-G48JESD-609代码：e3
长度：18.4 mm内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：131072 words字数代码：128000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：128KX16
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：12 mm
Base Number Matches：1

SST39VF200A-90-4C-EKE 数据手册

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash  
SST39LF200A / SST39LF400A / SST39LF800A  
SST39VF200A / SST39VF400A / SST39VF800A  
SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 128K x16 / 256K x16 / 512K x16  
Single Voltage Read and Write Operations  
•
Fast Erase and Word-Program  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Word-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
– 3.0-3.6V for SST39LF200A/400A/800A  
– 2.7-3.6V for SST39VF200A/400A/800A  
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
2 seconds (typical) for SST39LF/VF200A  
4 seconds (typical) for SST39LF/VF400A  
8 seconds (typical) for SST39LF/VF800A  
Low Power Consumption  
(typical values at 14 MHz)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
•
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Uniform 32 KWord blocks  
Fast Read Access Time  
– Toggle Bit  
– Data# Polling  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 45 and 55 ns for SST39LF200A/400A  
– 55 ns for SST39LF800A  
– 70 and 90 ns for SST39VF200A/400A/800A  
•
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm)  
– 48-ball WFBGA (4mm x 6mm) for 4M and 8M  
– 48-bump XFLGA (4mm x 6mm) for 4M and 8M  
•
Latched Address and Data  
PRODUCT DESCRIPTION  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are 128K x16 / 256K x16 / 512K x16 CMOS  
Multi-Purpose Flash (MPF) manufactured with SST’s pro-  
prietary, high performance CMOS SuperFlash technology.  
The split-gate cell design and thick oxide tunneling injector  
attain better reliability and manufacturability compared with  
alternate approaches. The SST39LF200A/400A/800A  
write (Program or Erase) with a 3.0-3.6V power supply.  
The SST39VF200A/400A/800A write (Program or Erase)  
with a 2.7-3.6V power supply. These devices conform to  
JEDEC standard pinouts for x16 memories.  
The SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices are suited for applications that require con-  
venient and economical updating of program, configura-  
tion, or data memory. For all system applications, they  
significantly improve performance and reliability, while low-  
ering power consumption. They inherently use less energy  
during Erase and Program than alternative flash technolo-  
gies. When programming a flash device, the total energy  
consumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed dur-  
ing any Erase or Program operation is less than alternative  
flash technologies. These devices also improve flexibility  
while lowering the cost for program, data, and configura-  
tion storage applications.  
Featuring high performance Word-Program, the  
SST39LF200A/400A/800A and SST39VF200A/400A/  
800A devices provide a typical Word-Program time of 14  
µsec. The devices use Toggle Bit or Data# Polling to detect  
the completion of the Program or Erase operation. To pro-  
tect against inadvertent write, they have on-chip hardware  
and software data protection schemes. Designed, manu-  
factured, and tested for a wide spectrum of applications,  
these devices are offered with a guaranteed typical endur-  
ance of 100,000 cycles. Data retention is rated at greater  
than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71117-07-000  
1
11/03  
These specifications are subject to change without notice.  
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 		*Not Recommended For New Design* The SST39VF3201 device is organized in 2M x16, The split

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