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SST39VF010-90-4I-NHE PDF预览

SST39VF010-90-4I-NHE

更新时间： 2024-11-29 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器内存集成电路
页数 文件大小 规格书
26页 417K
描述
128K X 8 FLASH 2.7V PROM, 90 ns, PQCC32, PLASTIC, MS-016AE, LCC-32

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SST39VF010-90-4I-NHE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：QFJ
包装说明：PLASTIC, MS-016AE, LCC-32针数：32
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.44
最长访问时间：90 nsJESD-30 代码：R-PQCC-J32
JESD-609代码：e3长度：13.97 mm
内存密度：1048576 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：32字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：260编程电压：2.7 V
认证状态：Not Qualified座面最大高度：3.556 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：J BEND
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

SST39VF010-90-4I-NHE 数据手册

 浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第2页浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第3页浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第4页浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第5页浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第6页浏览型号SST39VF010-90-4I-NHE的Datasheet PDF文件第7页 
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040  
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040  
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories  
Data Sheet  
FEATURES:  
•
•
Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8  
Single Voltage Read and Write Operations  
•
Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
– 3.0-3.6V for SST39LF512/010/020/040  
– 2.7-3.6V for SST39VF512/010/020/040  
•
•
Superior Reliability  
1 second (typical) for SST39LF/VF512  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
(typical values at 14 MHz)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Active Current: 5 mA (typical)  
– Standby Current: 1 µA (typical)  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
– Toggle Bit  
– Data# Polling  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
– 45 ns for SST39LF512/010/020/040  
– 55 ns for SST39LF020/040  
– 70 and 90 ns for SST39VF512/010/020/040  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
•
Latched Address and Data  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 48-ball TFBGA (6mm x 8mm) for 1M and 2M  
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M  
PRODUCT DESCRIPTION  
The SST39LF512/010/020/040 and SST39VF512/010/  
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8  
CMOS Multi-Purpose Flash (MPF) manufactured with  
SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide tun-  
neling injector attain better reliability and manufacturability  
compared with alternate approaches. The SST39LF512/  
010/020/040 devices write (Program or Erase) with a 3.0-  
3.6V power supply. The SST39VF512/010/020/040  
devices write with a 2.7-3.6V power supply. The devices  
conform to JEDEC standard pinouts for x8 memories.  
significantly improves performance and reliability, while low-  
ering power consumption. They inherently use less energy  
during Erase and Program than alternative flash technolo-  
gies. The total energy consumed is a function of the  
applied voltage, current, and time of application. Since for  
any given voltage range, the SuperFlash technology uses  
less current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program oper-  
ation is less than alternative flash technologies. These  
devices also improve flexibility while lowering the cost for  
program, data, and configuration storage applications.  
Featuring high performance Byte-Program, the  
SST39LF512/010/020/040 and SST39VF512/010/020/  
040 devices provide a maximum Byte-Program time of 20  
µsec. These devices use Toggle Bit or Data# Polling to indi-  
cate the completion of Program operation. To protect  
against inadvertent write, they have on-chip hardware and  
Software Data Protection schemes. Designed, manufac-  
tured, and tested for a wide spectrum of applications, they  
are offered with a guaranteed typical endurance of 10,000  
cycles. Data retention is rated at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
To meet surface mount requirements, the SST39LF512/  
010/020/040 and SST39VF512/010/020/040 devices are  
offered in 32-lead PLCC and 32-lead TSOP packages. The  
SST39LF/VF010 and SST39LF/VF020 are also offered in  
a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for  
pin assignments.  
The SST39LF512/010/020/040 and SST39VF512/010/  
020/040 devices are suited for applications that require  
convenient and economical updating of program, configu-  
ration, or data memory. For all system applications, they  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71150-07-000  
1
11/03  
These specifications are subject to change without notice.  
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SST39VF010-90-4I-WHE MICROCHIP

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 		128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32, 8 X 14 MM, MO-142BA, TSOP1-32
SST39VF010-90-4I-WHE SILICON

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SST39VF016-55-4C-B2K SILICON

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SST39VF016-55-4C-B3I SST

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SST39VF016-55-4C-EI SST

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