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SST39SF010A-70-4I-NHE

更新时间： 2024-11-01 04:50:35
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SST 闪存内存集成电路
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24页 380K
描述
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39SF010A / SST39SF020A / SST39SF040  
SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories  
Data Sheet  
FEATURES:  
•
•
•
Organized as 128K x8 / 256K x8 / 512K x8  
Single 4.5-5.5V Read and Write Operations  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
•
Fast Erase and Byte-Program  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39SF010A  
4 seconds (typical) for SST39SF020A  
8 seconds (typical) for SST39SF040  
•
Low Power Consumption  
(typical values at 14 MHz)  
– Active Current: 10 mA (typical)  
– Standby Current: 30 µA (typical)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
– Toggle Bit  
– Data# Polling  
•
•
Sector-Erase Capability  
– Uniform 4 KByte sectors  
Fast Read Access Time:  
– 45 ns  
– 70 ns  
Latched Address and Data  
•
•
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
•
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
– 32-pin PDIP  
PRODUCT DESCRIPTION  
The SST39SF010A/020A/040 are CMOS Multi-Purpose  
Flash (MPF) manufactured with SST’s proprietary, high  
performance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST39SF010A/020A/040 devices write  
(Program or Erase) with a 4.5-5.5V power supply. The  
SST39SF010A/020A/040 devices conform to JEDEC stan-  
dard pinouts for x8 memories.  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose Erase  
and Program times increase with accumulated Erase/Pro-  
gram cycles.  
Featuring high performance Byte-Program, the  
SST39SF010A/020A/040 devices provide a maximum  
Byte-Program time of 20 µsec. These devices use Toggle  
Bit or Data# Polling to indicate the completion of Program  
operation. To protect against inadvertent write, they have  
on-chip hardware and Software Data Protection schemes.  
Designed, manufactured, and tested for a wide spectrum of  
applications, these devices are offered with a guaranteed  
typical endurance of 10,000 cycles. Data retention is rated  
at greater than 100 years.  
To meet high density, surface mount requirements, the  
SST39SF010A/020A/040 are offered in 32-lead PLCC and  
32-lead TSOP packages. A 600 mil, 32-pin PDIP is also  
available. See Figures 1, 2, and 3 for pin assignments.  
The SST39SF010A/020A/040 devices are suited for appli-  
cations that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during erase and program than alter-  
native flash technologies. The total energy consumed is a  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71147-06-000  
1
8/04  
These specifications are subject to change without notice.  
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